High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

Jiancheng Yang, Shihyun Ahn, F. Ren, S. J. Pearton, Soohwan Jang, Jihyun Kim, A. Kuramata

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144 Citations (Scopus)


Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25-100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920-1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (∼6.7 mΩ cm2), was approximately 154.07 MW·cm−2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advance in the quality of bulk and epitaxial β-Ga2O3.

Original languageEnglish
Article number192101
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2017 May 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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