High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

Jiancheng Yang; Shihyun Ahn; F. Ren; S. J. Pearton; Soohwan Jang; Jihyun Kim; A. Kuramata

doi:10.1063/1.4983203

High reverse breakdown voltage Schottky rectifiers without edge termination on Ga₂O₃

Jiancheng Yang, Shihyun Ahn, F. Ren, S. J. Pearton, Soohwan Jang, Jihyun Kim, A. Kuramata

Research output: Contribution to journal › Article › peer-review

160 Citations (Scopus)

Abstract

Vertical geometry Ni/Au-β-Ga₂O₃ Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25-100 °C. The reverse breakdown voltage (V_BR) of these β-Ga₂O₃ rectifiers without edge termination was a function of the diode diameter, being in the range of 920-1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (V_BR²/R_on), where R_on is the on-state resistance (∼6.7 mΩ cm²), was approximately 154.07 MW·cm⁻² for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advance in the quality of bulk and epitaxial β-Ga₂O₃.

Original language	English
Article number	192101
Journal	Applied Physics Letters
Volume	110
Issue number	19
DOIs	https://doi.org/10.1063/1.4983203
Publication status	Published - 2017 May 8

Bibliographical note

Funding Information:
This project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The research at Dankook was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663) and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (2015M3A7B7045185). This work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012140). Part of this work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. We also thank Dr. Kohei Sasaki from Tamura Corporation for fruitful discussions.

Publisher Copyright:
© 2017 Author(s).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4983203

Cite this

@article{f9eefdaec9cf43b09ae43950794cfeaa,

title = "High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3",

abstract = "Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25-100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920-1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (∼6.7 mΩ cm2), was approximately 154.07 MW·cm−2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advance in the quality of bulk and epitaxial β-Ga2O3.",

author = "Jiancheng Yang and Shihyun Ahn and F. Ren and Pearton, {S. J.} and Soohwan Jang and Jihyun Kim and A. Kuramata",

note = "Funding Information: This project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The research at Dankook was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663) and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (2015M3A7B7045185). This work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012140). Part of this work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. We also thank Dr. Kohei Sasaki from Tamura Corporation for fruitful discussions. Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = may,

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doi = "10.1063/1.4983203",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

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T1 - High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

AU - Yang, Jiancheng

AU - Ahn, Shihyun

AU - Ren, F.

AU - Pearton, S. J.

AU - Jang, Soohwan

AU - Kim, Jihyun

AU - Kuramata, A.

N1 - Funding Information: This project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The research at Dankook was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663) and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (2015M3A7B7045185). This work at Korea University was supported by a Korea University grant, the LG Innotek-Korea University Nano-Photonics Program, the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012140). Part of this work at Tamura was supported by “The research and development project for innovation technique of energy conservation” of the New Energy and Industrial Technology Development Organization (NEDO), Japan. We also thank Dr. Kohei Sasaki from Tamura Corporation for fruitful discussions. Publisher Copyright: © 2017 Author(s).

PY - 2017/5/8

Y1 - 2017/5/8

N2 - Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25-100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920-1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (∼6.7 mΩ cm2), was approximately 154.07 MW·cm−2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advance in the quality of bulk and epitaxial β-Ga2O3.

AB - Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25-100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920-1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (∼6.7 mΩ cm2), was approximately 154.07 MW·cm−2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advance in the quality of bulk and epitaxial β-Ga2O3.

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