High security FeRAM-based EPC C1G2 UHF(860 MHz-960 MHz) passive RFID tag chip

Hee Bok Kang, Suk Kyoung Hong, Yong Wook Song, Man Young Sung, Bokgil Choi, Jinyong Chung, Jong Wook Lee

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.

Original languageEnglish
Pages (from-to)826-832
Number of pages7
JournalETRI Journal
Issue number6
Publication statusPublished - 2008 Dec


  • CLK
  • Demodulator
  • FeRAM
  • MFM
  • MIM
  • MRAM
  • Modulator
  • PIP
  • POR
  • PRAM
  • Passive RFID tag
  • Schottky diode
  • Voltage multiplier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Computer Science
  • Electrical and Electronic Engineering


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