Abstract
Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 × 2 crosspoint switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating InP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at ~ 1 GHz.
Original language | English |
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Pages (from-to) | 164-166 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 3 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1991 Feb |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering