High-Speed Signal Switching with a Monolithic Integrated p-i-n/Amp/ Switch on Indium Phosphide

C. W. Seabury; R. B. Bylsma; G. P. Vella-Coleiro; P. S. Davisson; C. M.L. Yee; J. Eng; J. Jeong; S. J. Kim; D. Debis; Y. K. Jhee

doi:10.1109/68.76877

High-Speed Signal Switching with a Monolithic Integrated p-i-n/Amp/ Switch on Indium Phosphide

C. W. Seabury
, R. B. Bylsma
, G. P. Vella-Coleiro
, P. S. Davisson
, C. M.L. Yee
, J. Eng
, J. Jeong
, S. J. Kim
, D. Debis
, Y. K. Jhee

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 × 2 crosspoint switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating InP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at ~ 1 GHz.

Original language	English
Pages (from-to)	164-166
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	3
Issue number	2
DOIs	https://doi.org/10.1109/68.76877
Publication status	Published - 1991 Feb

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.76877

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title = "High-Speed Signal Switching with a Monolithic Integrated p-i-n/Amp/ Switch on Indium Phosphide",

abstract = "Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 × 2 crosspoint switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating InP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at \textasciitilde{} 1 GHz.",

author = "Seabury, \{C. W.\} and Bylsma, \{R. B.\} and Vella-Coleiro, \{G. P.\} and Davisson, \{P. S.\} and Yee, \{C. M.L.\} and J. Eng and J. Jeong and Kim, \{S. J.\} and D. Debis and Jhee, \{Y. K.\}",

year = "1991",

month = feb,

doi = "10.1109/68.76877",

language = "English",

volume = "3",

pages = "164--166",

journal = "IEEE Photonics Technology Letters",

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T1 - High-Speed Signal Switching with a Monolithic Integrated p-i-n/Amp/ Switch on Indium Phosphide

AU - Seabury, C. W.

AU - Bylsma, R. B.

AU - Vella-Coleiro, G. P.

AU - Davisson, P. S.

AU - Yee, C. M.L.

AU - Eng, J.

AU - Jeong, J.

AU - Kim, S. J.

AU - Debis, D.

AU - Jhee, Y. K.

PY - 1991/2

Y1 - 1991/2

N2 - Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 × 2 crosspoint switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating InP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at ~ 1 GHz.

AB - Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 × 2 crosspoint switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating InP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at ~ 1 GHz.

UR - https://www.scopus.com/pages/publications/0026105573

U2 - 10.1109/68.76877

DO - 10.1109/68.76877

M3 - Article

AN - SCOPUS:0026105573

SN - 1041-1135

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SP - 164

EP - 166

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

High-Speed Signal Switching with a Monolithic Integrated p-i-n/Amp/ Switch on Indium Phosphide

Abstract

ASJC Scopus subject areas

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