@inproceedings{979a0997b9234c96a278b27b0dfa0808,
title = "High temperature GaN based Schottky diode gas sensors",
abstract = "In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900°C annealing.",
keywords = "Annealing, Gallium nitride, Gas detectors, Gold, Hydrogen, Schottky barriers, Schottky diodes, Silicon carbide, Temperature sensors, Thermal stability",
author = "F. Ren and J. Kim and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.} and Baca, {A. G.} and Briggs, {R. D.} and Chung, {G. Y.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCS.2003.1239906",
language = "English",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "61--62",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
}