High-temperature stable operation of nanoribbon field-effect transistors

Chang Young Choi; Ji Hoon Lee; Jung Hyuk Koh; Jae Geun Ha; Sang Mo Koo; Sangsig Kim

doi:10.1007/s11671-010-9714-y

High-temperature stable operation of nanoribbon field-effect transistors

Chang Young Choi, Ji Hoon Lee, Jung Hyuk Koh, Jae Geun Ha, Sang Mo Koo, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 × 10 ^-6).

Original language	English
Pages (from-to)	1795-1799
Number of pages	5
Journal	Nanoscale Research Letters
Volume	5
Issue number	11
DOIs	https://doi.org/10.1007/s11671-010-9714-y
Publication status	Published - 2010 Nov

Bibliographical note

Funding Information:
Acknowledgements This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2009-0066544 and 2010-0015360) and the Research Grant of Kwangwoon University in 2010.

Keywords

Electron mobility
Field-effect transistors (FETs)
Nanoribbon FET
Variation of the current level

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1007/s11671-010-9714-y

Cite this

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title = "High-temperature stable operation of nanoribbon field-effect transistors",

abstract = "We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 × 10 -6).",

keywords = "Electron mobility, Field-effect transistors (FETs), Nanoribbon FET, Variation of the current level",

author = "Choi, {Chang Young} and Lee, {Ji Hoon} and Koh, {Jung Hyuk} and Ha, {Jae Geun} and Koo, {Sang Mo} and Sangsig Kim",

note = "Funding Information: Acknowledgements This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2009-0066544 and 2010-0015360) and the Research Grant of Kwangwoon University in 2010.",

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AU - Choi, Chang Young

AU - Lee, Ji Hoon

AU - Koh, Jung Hyuk

AU - Ha, Jae Geun

AU - Koo, Sang Mo

AU - Kim, Sangsig

N1 - Funding Information: Acknowledgements This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2009-0066544 and 2010-0015360) and the Research Grant of Kwangwoon University in 2010.

PY - 2010/11

Y1 - 2010/11

N2 - We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 × 10 -6).

AB - We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 × 10 -6).

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High-temperature stable operation of nanoribbon field-effect transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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