High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC

Jihyun Kim; F. Ren; A. G. Baca; R. D. Briggs; S. J. Pearton

doi:10.1016/S0038-1101(03)00069-8

High temperature thermal stability of Au/Ti/WSi_x Schottky contacts on n-type 4H-SiC

Jihyun Kim, F. Ren, A. G. Baca, R. D. Briggs, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The thermal stability of Au/Ti/WSi_x contacts on 4H-SiC was examined by Auger electron spectroscopy and current-voltage measurements. The silicide-based contacts on SiC are found to exhibit improved thermal stability compared to pure W contacts. The Au/Ti/WSi_x contacts show a maximum Schottky barrier height of ∼1.15 eV as obtained from current-voltage (I-V) measurements. After 500 °C anneals, the Ti diffuses to the surface of the contact structure, followed by a Au-rich layer and finally the WSi_x. After 1000 °C anneals, the Ti and Au showed significant mixing. Particulates formed on the surface in the latter case were Au-rich phases.

Original language	English
Pages (from-to)	1345-1350
Number of pages	6
Journal	Solid-State Electronics
Volume	47
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(03)00069-8
Publication status	Published - 2003 Aug
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(03)00069-8

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@article{0fd5290c2b54400eb40b4eabfaaf7ee4,

title = "High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC",

abstract = "The thermal stability of Au/Ti/WSix contacts on 4H-SiC was examined by Auger electron spectroscopy and current-voltage measurements. The silicide-based contacts on SiC are found to exhibit improved thermal stability compared to pure W contacts. The Au/Ti/WSix contacts show a maximum Schottky barrier height of ∼1.15 eV as obtained from current-voltage (I-V) measurements. After 500 °C anneals, the Ti diffuses to the surface of the contact structure, followed by a Au-rich layer and finally the WSix. After 1000 °C anneals, the Ti and Au showed significant mixing. Particulates formed on the surface in the latter case were Au-rich phases.",

author = "Jihyun Kim and F. Ren and Baca, {A. G.} and Briggs, {R. D.} and Pearton, {S. J.}",

note = "Funding Information: The work at UF is particularly supported by NASA (NAG10-316, Dr. William Knott) and the UCF-UF Space research Initiative, and also by NSF DMR-0101438. Sandia is a multiprogram laboratory operated by Sandia Corporation for Lockheed–Martin under DOE contract DE-AC-04-85000. ",

year = "2003",

month = aug,

doi = "10.1016/S0038-1101(03)00069-8",

language = "English",

volume = "47",

pages = "1345--1350",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "8",

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TY - JOUR

T1 - High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC

AU - Kim, Jihyun

AU - Ren, F.

AU - Baca, A. G.

AU - Briggs, R. D.

AU - Pearton, S. J.

N1 - Funding Information: The work at UF is particularly supported by NASA (NAG10-316, Dr. William Knott) and the UCF-UF Space research Initiative, and also by NSF DMR-0101438. Sandia is a multiprogram laboratory operated by Sandia Corporation for Lockheed–Martin under DOE contract DE-AC-04-85000.

PY - 2003/8

Y1 - 2003/8

N2 - The thermal stability of Au/Ti/WSix contacts on 4H-SiC was examined by Auger electron spectroscopy and current-voltage measurements. The silicide-based contacts on SiC are found to exhibit improved thermal stability compared to pure W contacts. The Au/Ti/WSix contacts show a maximum Schottky barrier height of ∼1.15 eV as obtained from current-voltage (I-V) measurements. After 500 °C anneals, the Ti diffuses to the surface of the contact structure, followed by a Au-rich layer and finally the WSix. After 1000 °C anneals, the Ti and Au showed significant mixing. Particulates formed on the surface in the latter case were Au-rich phases.

AB - The thermal stability of Au/Ti/WSix contacts on 4H-SiC was examined by Auger electron spectroscopy and current-voltage measurements. The silicide-based contacts on SiC are found to exhibit improved thermal stability compared to pure W contacts. The Au/Ti/WSix contacts show a maximum Schottky barrier height of ∼1.15 eV as obtained from current-voltage (I-V) measurements. After 500 °C anneals, the Ti diffuses to the surface of the contact structure, followed by a Au-rich layer and finally the WSix. After 1000 °C anneals, the Ti and Au showed significant mixing. Particulates formed on the surface in the latter case were Au-rich phases.

UR - http://www.scopus.com/inward/record.url?scp=0037838946&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00069-8

DO - 10.1016/S0038-1101(03)00069-8

M3 - Article

AN - SCOPUS:0037838946

SN - 0038-1101

VL - 47

SP - 1345

EP - 1350

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 8

ER -

High temperature thermal stability of Au/Ti/WSi_x Schottky contacts on n-type 4H-SiC

Abstract

ASJC Scopus subject areas

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