High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

P. Fochuk; I. Nakonechnyi; O. Kopach; Ye Verzhak; O. Panchuk; V. Komar; I. Terzin; V. Kutnij; A. Rybka; Ye Nykoniuk; A. E. Bolotnikov; G. C. Camarda; Y. Cui; A. Hossain; K. H. Kim; G. Yang; R. B. James

doi:10.1117/12.929035

High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

P. Fochuk, I. Nakonechnyi, O. Kopach, Ye Verzhak, O. Panchuk, V. Komar, I. Terzin, V. Kutnij, A. Rybka, Ye Nykoniuk, A. E. Bolotnikov, G. C. Camarda, Y. Cui, A. Hossain, K. H. Kim, G. Yang, R. B. James

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

We evaluated the effect of high-temperature treatment of Cd _0.9Zn_0.1Te:In single crystals using Hall-effect measurements, medium- and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ∼730 K sharply increased the electrical conductivity (by ∼1-2 orders-of-magnitude). Plots of the temperature- and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kröger's theory of quasi-chemical reactions between point defects in solids.

Original language	English
Title of host publication	Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
DOIs	https://doi.org/10.1117/12.929035
Publication status	Published - 2012
Externally published	Yes
Event	Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV - San Diego, CA, United States Duration: 2012 Aug 13 → 2012 Aug 15

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8507
ISSN (Print)	0277-786X

Conference

Conference	Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Country/Territory	United States
City	San Diego, CA
Period	12/8/13 → 12/8/15

Keywords

Annealing
CdZnTe: In
Hall effect
High-pressure Bridgman growth method
Inclusions
Point defects
Single crystals

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.929035

Cite this

Fochuk, P., Nakonechnyi, I., Kopach, O., Verzhak, Y., Panchuk, O., Komar, V., Terzin, I., Kutnij, V., Rybka, A., Nykoniuk, Y., Bolotnikov, A. E., Camarda, G. C., Cui, Y., Hossain, A., Kim, K. H., Yang, G., & James, R. B. (2012). High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method. In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV [85071L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8507). https://doi.org/10.1117/12.929035

High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method. / Fochuk, P.; Nakonechnyi, I.; Kopach, O. et al.
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV. 2012. 85071L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8507).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fochuk, P, Nakonechnyi, I, Kopach, O, Verzhak, Y, Panchuk, O, Komar, V, Terzin, I, Kutnij, V, Rybka, A, Nykoniuk, Y, Bolotnikov, AE, Camarda, GC, Cui, Y, Hossain, A, Kim, KH, Yang, G & James, RB 2012, High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method. in Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV., 85071L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, San Diego, CA, United States, 12/8/13. https://doi.org/10.1117/12.929035

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title = "High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method",

abstract = "We evaluated the effect of high-temperature treatment of Cd 0.9Zn0.1Te:In single crystals using Hall-effect measurements, medium- and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ∼730 K sharply increased the electrical conductivity (by ∼1-2 orders-of-magnitude). Plots of the temperature- and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kr{\"o}ger's theory of quasi-chemical reactions between point defects in solids.",

keywords = "Annealing, CdZnTe: In, Hall effect, High-pressure Bridgman growth method, Inclusions, Point defects, Single crystals",

author = "P. Fochuk and I. Nakonechnyi and O. Kopach and Ye Verzhak and O. Panchuk and V. Komar and I. Terzin and V. Kutnij and A. Rybka and Ye Nykoniuk and Bolotnikov, {A. E.} and Camarda, {G. C.} and Y. Cui and A. Hossain and Kim, {K. H.} and G. Yang and James, {R. B.}",

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doi = "10.1117/12.929035",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

AU - Fochuk, P.

AU - Nakonechnyi, I.

AU - Kopach, O.

AU - Verzhak, Ye

AU - Panchuk, O.

AU - Komar, V.

AU - Terzin, I.

AU - Kutnij, V.

AU - Rybka, A.

AU - Nykoniuk, Ye

AU - Bolotnikov, A. E.

AU - Camarda, G. C.

AU - Cui, Y.

AU - Hossain, A.

AU - Kim, K. H.

AU - Yang, G.

AU - James, R. B.

PY - 2012

Y1 - 2012

N2 - We evaluated the effect of high-temperature treatment of Cd 0.9Zn0.1Te:In single crystals using Hall-effect measurements, medium- and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ∼730 K sharply increased the electrical conductivity (by ∼1-2 orders-of-magnitude). Plots of the temperature- and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kröger's theory of quasi-chemical reactions between point defects in solids.

AB - We evaluated the effect of high-temperature treatment of Cd 0.9Zn0.1Te:In single crystals using Hall-effect measurements, medium- and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ∼730 K sharply increased the electrical conductivity (by ∼1-2 orders-of-magnitude). Plots of the temperature- and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kröger's theory of quasi-chemical reactions between point defects in solids.

KW - Annealing

KW - CdZnTe: In

KW - Hall effect

KW - High-pressure Bridgman growth method

KW - Inclusions

KW - Point defects

KW - Single crystals

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DO - 10.1117/12.929035

M3 - Conference contribution

AN - SCOPUS:84872904634

SN - 9780819492241

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV

T2 - Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV

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ER -

High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

Abstract

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Keywords

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