Abstract
We report on the formation of NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) transparent p-type Ohmic electrodes for GaN-based near-UV light-emitting diodes (LEDs). We show that the NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) contacts become Ohmic with contact resistivity of 4.9 × 10-3 Ωcm 2 and a transmittance of 80 % at 400 nm when annealed at 630 °C for 1 min in air. Near-UV (400 nm) LEDs fabricated with the annealed NiSc/Ag/ITO p-contacts give a forward-bias voltage of 3.69 V at 20 mA and a series resistance of 21.1 Ω, which are better than those for Ni/Au contacts. Based on Auger electron spectroscopy and electrical results, possible Ohmic formation mechanisms are described.
Original language | English |
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Pages (from-to) | 159-162 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 51 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2007 Jul |
Keywords
- Contact resistivity
- LED
- Transmittance
- p-type Ohmic contact
ASJC Scopus subject areas
- Physics and Astronomy(all)