High transparency of AgZn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes

Dong Seok Leem; June O. Song; Woong Ki Hong; Jeong Tae Maeng; J. S. Kwak; Y. Park; Tae Yeon Seong

doi:10.1063/1.1879084

High transparency of AgZn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes

Dong Seok Leem, June O. Song, Woong Ki Hong, Jeong Tae Maeng, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

AgZn-Ni solid-solution scheme has been investigated to produce transparent ohmic contacts for ultraviolet (UV) light-emitting diodes (LEDs). The AgZn-Ni solid-solution contacts annealed at 430 °C for 1 min in air show high transmittance of 67%-69% at 340 nm, which is much better than that (53%) of the conventional NiAu contact. The annealed contacts give specific contact resistance of 8.2× 10-5 and 4.8× 10-5 Ω cm2. Further, near UV LEDs (300×300 μ m2) made with the annealed contact layers produce a forward-bias voltage of 3.32-3.46 V at 20 mA. Possible explanations are given to describe the annealing-induced improvement of the ohmic behaviors of the AgZn-Ni solid-solution contacts.

Original language	English
Article number	102102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	10
DOIs	https://doi.org/10.1063/1.1879084
Publication status	Published - 2005 Mar 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1879084

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title = "High transparency of AgZn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes",

abstract = "AgZn-Ni solid-solution scheme has been investigated to produce transparent ohmic contacts for ultraviolet (UV) light-emitting diodes (LEDs). The AgZn-Ni solid-solution contacts annealed at 430 °C for 1 min in air show high transmittance of 67%-69% at 340 nm, which is much better than that (53%) of the conventional NiAu contact. The annealed contacts give specific contact resistance of 8.2× 10-5 and 4.8× 10-5 Ω cm2. Further, near UV LEDs (300×300 μ m2) made with the annealed contact layers produce a forward-bias voltage of 3.32-3.46 V at 20 mA. Possible explanations are given to describe the annealing-induced improvement of the ohmic behaviors of the AgZn-Ni solid-solution contacts.",

author = "Leem, {Dong Seok} and Song, {June O.} and Hong, {Woong Ki} and Maeng, {Jeong Tae} and Kwak, {J. S.} and Y. Park and Seong, {Tae Yeon}",

note = "Funding Information: This work was in part supported by a Korea Research Foundation grant (KRF-2003-042-D00131). ",

year = "2005",

month = mar,

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doi = "10.1063/1.1879084",

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T1 - High transparency of AgZn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes

AU - Leem, Dong Seok

AU - Song, June O.

AU - Hong, Woong Ki

AU - Maeng, Jeong Tae

AU - Kwak, J. S.

AU - Park, Y.

AU - Seong, Tae Yeon

N1 - Funding Information: This work was in part supported by a Korea Research Foundation grant (KRF-2003-042-D00131).

PY - 2005/3/7

Y1 - 2005/3/7

N2 - AgZn-Ni solid-solution scheme has been investigated to produce transparent ohmic contacts for ultraviolet (UV) light-emitting diodes (LEDs). The AgZn-Ni solid-solution contacts annealed at 430 °C for 1 min in air show high transmittance of 67%-69% at 340 nm, which is much better than that (53%) of the conventional NiAu contact. The annealed contacts give specific contact resistance of 8.2× 10-5 and 4.8× 10-5 Ω cm2. Further, near UV LEDs (300×300 μ m2) made with the annealed contact layers produce a forward-bias voltage of 3.32-3.46 V at 20 mA. Possible explanations are given to describe the annealing-induced improvement of the ohmic behaviors of the AgZn-Ni solid-solution contacts.

AB - AgZn-Ni solid-solution scheme has been investigated to produce transparent ohmic contacts for ultraviolet (UV) light-emitting diodes (LEDs). The AgZn-Ni solid-solution contacts annealed at 430 °C for 1 min in air show high transmittance of 67%-69% at 340 nm, which is much better than that (53%) of the conventional NiAu contact. The annealed contacts give specific contact resistance of 8.2× 10-5 and 4.8× 10-5 Ω cm2. Further, near UV LEDs (300×300 μ m2) made with the annealed contact layers produce a forward-bias voltage of 3.32-3.46 V at 20 mA. Possible explanations are given to describe the annealing-induced improvement of the ohmic behaviors of the AgZn-Ni solid-solution contacts.

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High transparency of AgZn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes

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