High ultraviolet transparent conducting electrodes formed using tantalum oxide/Ag multilayer

We investigated the optical and electrical properties of Ta₂O₅/Ag/Ta₂O₅ films as functions of the thicknesses of the Ta₂O₅ and Ag layers. It was found that with an increase in the thicknesses of the Ta₂O₅ and Ag layers from 10 to 40 nm and from 12 to 24 nm, respectively, the sheet resistance, carrier concentration, electron mobility, and resistivity of the Ta₂O₅/Ag/Ta₂O₅ film varied from 2.02 to 8.95 Ω/sq, 5.74 × 10²¹ to 2.92 × 10²² cm^–3, from 13.21 to 24.07 cm²/V·s, and from 8.89 × 10^-6 to 8.24 × 10^-5 Ω cm, respectively. The average transmittance (T_av) of the multilayer samples ranged from 57.18% to 93.99%, and it depended on the Ta₂O₅ and Ag layer thicknesses. The highest T_av of 93.99% was observed for the film with 35 nm thick Ta₂O₅ and 18 nm thick Ag layers, and the peak Haacke's figure of merit (157.04 × 10^–3 Ω^–1) was obtained for 20 nm thick Ta₂O₅ and 21 nm thick Ag layers. Ta₂O₅ (100 nm) and Ta₂O₅/Ag/Ta₂O₅ (20 nm/21 nm/20 nm) samples had optical bandgaps of 4.70 and 4.45 eV, respectively. Film Wizard simulations were conducted to understand the dependence of the transmittance of the multilayer on the thicknesses of the Ta₂O₅ and Ag layers, and phasor analyses were performed to determine how the transmittance of the Ta₂O₅/Ag/Ta₂O₅ (20 nm/21 nm/20 nm) film depended on the Ta₂O₅ layer's thickness.