High-yield assembly of graphene field-effect transistors under a non-uniform electric field

Hyunik Park, Sooyeoun Oh, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Graphene field-effect transistors (GFETs) were fabricated by aligning the dispersed graphene flakes precisely with the pre-defined Ti/Au electrodes on SiO2/Si substrate by using a non-uniform electric field, where a large density of the graphene flakes was prepared by sonicating three-dimensional (3-D) graphene foam. Effects of ultra-violet (UV) illuminations and vacuum annealing on the electrical characteristics of the processed GFETs were investigated.Aremarkable increase in conductivity and carrier mobilitywas observed after vacuum annealing at 100°C, which was more effective than UV illuminations to improve the electrical performance of our GFETs. Our method to obtain the dispersed graphene flakes from 3-D graphene foam and assemble them by a dielectrophoretic force allows a reliable, scalable, and controllable fabrication of GFETs.

Original languageEnglish
Pages (from-to)M15-M17
JournalECS Solid State Letters
Issue number2
Publication statusPublished - 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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