Highly efficient low temperature solution processable planar type CH3NH3PbI3 perovskite flexible solar cells

Jin Hyuck Heo; Min Ho Lee; Hye Ji Han; Basavaraj Rudragouda Patil; Jae Su Yu; Sang Hyuk Im

doi:10.1039/c5ta09520d

Highly efficient low temperature solution processable planar type CH₃NH₃PbI₃ perovskite flexible solar cells

Jin Hyuck Heo, Min Ho Lee, Hye Ji Han, Basavaraj Rudragouda Patil, Jae Su Yu, Sang Hyuk Im

Research output: Contribution to journal › Article › peer-review

221 Citations (Scopus)

Abstract

The current density-voltage (J-V) hysteresis and power conversion efficiency (η) of planar type CH₃NH₃PbI₃ perovskite solar cells with TiO₂ and ZnO electron conductors, which are formed by high temperature spray pyrolysis deposition at 450 °C and by room temperature spin-coating and subsequent heat-treatment at 150 °C, respectively, were compared. The ZnO based perovskite solar cells exhibited better efficiency deviation (15.96 ± 1.07%) and less J-V hysteresis than the TiO₂ based cells (15.20 ± 1.23%) because the ZnO based cell has 1.2 fold longer charge carrier life time (τ_n) than the ZnO based cell and the ZnO electron conductor has better electron conductivity (0.0031 mS cm^-1) than the TiO₂ electron conductor (0.00006 mS cm^-1), thereby balancing the electron flux and the hole flux more. Due to the low temperature solution processability of the ZnO electron conductor, we could demonstrate a highly efficient PEN (poly-ethylenenaphthalate)/ITO/ZnO/CH₃NH₃PbI₃ perovskite/PTAA/Au flexible planar solar cell with 1.1 V open-circuit voltage (V_oc), 18.7 short-circuit current density (mA cm^-2) J_sc, 75% fill factor (FF), and 15.4% η for the forward scan direction and 1.1 V V_oc, 18.7 mA cm^-2J_sc, 76% FF and 15.6% η for the reverse scan direction under illumination of 1 Sun.

Original language	English
Pages (from-to)	1572-1578
Number of pages	7
Journal	Journal of Materials Chemistry A
Volume	4
Issue number	5
DOIs	https://doi.org/10.1039/c5ta09520d
Publication status	Published - 2016 Feb 7
Externally published	Yes

Bibliographical note

Funding Information:
This study was supported by a grant from Kyung Hee University in 2015 (KHU-20150641), Mid-career Research Program (No. NRF-2013R1A2A2A01067999), Basic Science Research Program (No. 2014R1A5A1009799), and the Global Frontier R&D Program of the Center for Multiscale Energy System through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning.

Publisher Copyright:
© The Royal Society of Chemistry.

ASJC Scopus subject areas

Chemistry(all)
Renewable Energy, Sustainability and the Environment
Materials Science(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1039/c5ta09520d

Cite this

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title = "Highly efficient low temperature solution processable planar type CH3NH3PbI3 perovskite flexible solar cells",

abstract = "The current density-voltage (J-V) hysteresis and power conversion efficiency (η) of planar type CH3NH3PbI3 perovskite solar cells with TiO2 and ZnO electron conductors, which are formed by high temperature spray pyrolysis deposition at 450 °C and by room temperature spin-coating and subsequent heat-treatment at 150 °C, respectively, were compared. The ZnO based perovskite solar cells exhibited better efficiency deviation (15.96 ± 1.07%) and less J-V hysteresis than the TiO2 based cells (15.20 ± 1.23%) because the ZnO based cell has 1.2 fold longer charge carrier life time (τn) than the ZnO based cell and the ZnO electron conductor has better electron conductivity (0.0031 mS cm-1) than the TiO2 electron conductor (0.00006 mS cm-1), thereby balancing the electron flux and the hole flux more. Due to the low temperature solution processability of the ZnO electron conductor, we could demonstrate a highly efficient PEN (poly-ethylenenaphthalate)/ITO/ZnO/CH3NH3PbI3 perovskite/PTAA/Au flexible planar solar cell with 1.1 V open-circuit voltage (Voc), 18.7 short-circuit current density (mA cm-2) Jsc, 75% fill factor (FF), and 15.4% η for the forward scan direction and 1.1 V Voc, 18.7 mA cm-2Jsc, 76% FF and 15.6% η for the reverse scan direction under illumination of 1 Sun.",

author = "Heo, {Jin Hyuck} and Lee, {Min Ho} and Han, {Hye Ji} and Patil, {Basavaraj Rudragouda} and Yu, {Jae Su} and Im, {Sang Hyuk}",

note = "Funding Information: This study was supported by a grant from Kyung Hee University in 2015 (KHU-20150641), Mid-career Research Program (No. NRF-2013R1A2A2A01067999), Basic Science Research Program (No. 2014R1A5A1009799), and the Global Frontier R&D Program of the Center for Multiscale Energy System through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning. Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

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doi = "10.1039/c5ta09520d",

language = "English",

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T1 - Highly efficient low temperature solution processable planar type CH3NH3PbI3 perovskite flexible solar cells

AU - Heo, Jin Hyuck

AU - Lee, Min Ho

AU - Han, Hye Ji

AU - Patil, Basavaraj Rudragouda

AU - Yu, Jae Su

AU - Im, Sang Hyuk

N1 - Funding Information: This study was supported by a grant from Kyung Hee University in 2015 (KHU-20150641), Mid-career Research Program (No. NRF-2013R1A2A2A01067999), Basic Science Research Program (No. 2014R1A5A1009799), and the Global Frontier R&D Program of the Center for Multiscale Energy System through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning. Publisher Copyright: © The Royal Society of Chemistry.

PY - 2016/2/7

Y1 - 2016/2/7

N2 - The current density-voltage (J-V) hysteresis and power conversion efficiency (η) of planar type CH3NH3PbI3 perovskite solar cells with TiO2 and ZnO electron conductors, which are formed by high temperature spray pyrolysis deposition at 450 °C and by room temperature spin-coating and subsequent heat-treatment at 150 °C, respectively, were compared. The ZnO based perovskite solar cells exhibited better efficiency deviation (15.96 ± 1.07%) and less J-V hysteresis than the TiO2 based cells (15.20 ± 1.23%) because the ZnO based cell has 1.2 fold longer charge carrier life time (τn) than the ZnO based cell and the ZnO electron conductor has better electron conductivity (0.0031 mS cm-1) than the TiO2 electron conductor (0.00006 mS cm-1), thereby balancing the electron flux and the hole flux more. Due to the low temperature solution processability of the ZnO electron conductor, we could demonstrate a highly efficient PEN (poly-ethylenenaphthalate)/ITO/ZnO/CH3NH3PbI3 perovskite/PTAA/Au flexible planar solar cell with 1.1 V open-circuit voltage (Voc), 18.7 short-circuit current density (mA cm-2) Jsc, 75% fill factor (FF), and 15.4% η for the forward scan direction and 1.1 V Voc, 18.7 mA cm-2Jsc, 76% FF and 15.6% η for the reverse scan direction under illumination of 1 Sun.

AB - The current density-voltage (J-V) hysteresis and power conversion efficiency (η) of planar type CH3NH3PbI3 perovskite solar cells with TiO2 and ZnO electron conductors, which are formed by high temperature spray pyrolysis deposition at 450 °C and by room temperature spin-coating and subsequent heat-treatment at 150 °C, respectively, were compared. The ZnO based perovskite solar cells exhibited better efficiency deviation (15.96 ± 1.07%) and less J-V hysteresis than the TiO2 based cells (15.20 ± 1.23%) because the ZnO based cell has 1.2 fold longer charge carrier life time (τn) than the ZnO based cell and the ZnO electron conductor has better electron conductivity (0.0031 mS cm-1) than the TiO2 electron conductor (0.00006 mS cm-1), thereby balancing the electron flux and the hole flux more. Due to the low temperature solution processability of the ZnO electron conductor, we could demonstrate a highly efficient PEN (poly-ethylenenaphthalate)/ITO/ZnO/CH3NH3PbI3 perovskite/PTAA/Au flexible planar solar cell with 1.1 V open-circuit voltage (Voc), 18.7 short-circuit current density (mA cm-2) Jsc, 75% fill factor (FF), and 15.4% η for the forward scan direction and 1.1 V Voc, 18.7 mA cm-2Jsc, 76% FF and 15.6% η for the reverse scan direction under illumination of 1 Sun.

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