Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature

Jun Ho Kim; Da Som Kim; Sun Kyung Kim; Young Zo Yoo; Jeong Hwan Lee; Sang Woo Kim; Tae Yeon Seong

doi:10.1016/j.ceramint.2015.10.146

Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature

Jun Ho Kim, Da Som Kim, Sun Kyung Kim, Young Zo Yoo, Jeong Hwan Lee, Sang Woo Kim, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36 nm)/Ag/AZO (36 nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74–89% at 550 nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23 nm, the carrier concentration increased from 5.84×10²¹ to 9.66×10²¹ cm⁻³, while the sheet resistance decreased from 10.15 to 3.47 Ω sq⁻¹. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19 nm (43.9×10⁻³ Ω⁻¹). The resistance change for the 100 nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36 nm)/Ag (19 nm)/AZO (36 nm) film remained constant up to 1000 cycles.

Original language	English
Pages (from-to)	3473-3478
Number of pages	6
Journal	Ceramics International
Volume	42
Issue number	2
DOIs	https://doi.org/10.1016/j.ceramint.2015.10.146
Publication status	Published - 2016

Bibliographical note

Funding Information:
This work was supported by the Korea Evaluation Institute of Industrial Technology (Grant no. 10049601 ) and WC300 R&D (Grant no. S2317456) through Korea Institute for Advancement of Technology (KIAT) which is funded by the Small and Medium Business Administration, Korea. S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning ( NRF-2013R1A1A1059423 ).

Publisher Copyright:
© 2015 Elsevier Ltd and Techna Group S.r.l.

Keywords

Ag
Al-doped ZnO
Flexible device
Transparent conducting electrode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2015.10.146

Cite this

@article{5f15387b01ef483ab1217fca5b4f00dc,

title = "Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature",

abstract = "We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36 nm)/Ag/AZO (36 nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74–89% at 550 nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23 nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm−3, while the sheet resistance decreased from 10.15 to 3.47 Ω sq−1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19 nm (43.9×10−3 Ω−1). The resistance change for the 100 nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36 nm)/Ag (19 nm)/AZO (36 nm) film remained constant up to 1000 cycles.",

keywords = "Ag, Al-doped ZnO, Flexible device, Transparent conducting electrode",

author = "Kim, {Jun Ho} and Kim, {Da Som} and Kim, {Sun Kyung} and Yoo, {Young Zo} and {Hwan Lee}, Jeong and Kim, {Sang Woo} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Korea Evaluation Institute of Industrial Technology (Grant no. 10049601 ) and WC300 R&D (Grant no. S2317456) through Korea Institute for Advancement of Technology (KIAT) which is funded by the Small and Medium Business Administration, Korea. S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning ( NRF-2013R1A1A1059423 ). Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd and Techna Group S.r.l.",

year = "2016",

doi = "10.1016/j.ceramint.2015.10.146",

language = "English",

volume = "42",

pages = "3473--3478",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "2",

}

TY - JOUR

T1 - Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature

AU - Kim, Jun Ho

AU - Kim, Da Som

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Hwan Lee, Jeong

AU - Kim, Sang Woo

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Korea Evaluation Institute of Industrial Technology (Grant no. 10049601 ) and WC300 R&D (Grant no. S2317456) through Korea Institute for Advancement of Technology (KIAT) which is funded by the Small and Medium Business Administration, Korea. S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning ( NRF-2013R1A1A1059423 ). Publisher Copyright: © 2015 Elsevier Ltd and Techna Group S.r.l.

PY - 2016

Y1 - 2016

N2 - We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36 nm)/Ag/AZO (36 nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74–89% at 550 nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23 nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm−3, while the sheet resistance decreased from 10.15 to 3.47 Ω sq−1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19 nm (43.9×10−3 Ω−1). The resistance change for the 100 nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36 nm)/Ag (19 nm)/AZO (36 nm) film remained constant up to 1000 cycles.

AB - We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36 nm)/Ag/AZO (36 nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74–89% at 550 nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23 nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm−3, while the sheet resistance decreased from 10.15 to 3.47 Ω sq−1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19 nm (43.9×10−3 Ω−1). The resistance change for the 100 nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36 nm)/Ag (19 nm)/AZO (36 nm) film remained constant up to 1000 cycles.

KW - Ag

KW - Al-doped ZnO

KW - Flexible device

KW - Transparent conducting electrode

UR - http://www.scopus.com/inward/record.url?scp=84948980910&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2015.10.146

DO - 10.1016/j.ceramint.2015.10.146

M3 - Article

AN - SCOPUS:84948980910

SN - 0272-8842

VL - 42

SP - 3473

EP - 3478

JO - Ceramics International

JF - Ceramics International

IS - 2

ER -

Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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