Highly-integrable K-band power dividers based on digital CMOS technology

  • Sanggu Park
  • , Jinho Jeong
  • , Sanggeun Jeon*
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In this paper, we present two-way and four-way power dividers that operate in wideband over K-band. To maximize the integrability with other circuit blocks, the power dividers are designed in a purely digital CMOS technology without any RF back-end-of-line process. We discuss a design issue arising from the high loss of transmission lines in the digital process. A capacitor-loaded Wilkinson topology is adopted for a compact size. The proposed dividers are implemented in a 0.13-μm digital CMOS process with automatic dummy metal fills. We also analyze the effect of the dummy fills on the power divider performance, showing good agreement with measured results.

    Original languageEnglish
    Pages (from-to)114-120
    Number of pages7
    Journalieice electronics express
    Volume8
    Issue number3
    DOIs
    Publication statusPublished - 2011 Feb 10

    Keywords

    • Digital CMOS process
    • Dummy metal fills
    • Power divider
    • Wilkinson divider

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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