Abstract
We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.
Original language | English |
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Pages (from-to) | G320-G323 |
Journal | Electrochemical and Solid-State Letters |
Volume | 8 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2005 |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering