Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Woong Ki Hong; June O. Song; Hyun Gi Hong; Keun Yong Ban; Takhee Lee; J. S. Kwak; Y. Park; Tae Yeon Seong

doi:10.1149/1.2056467

Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Woong Ki Hong, June O. Song, Hyun Gi Hong, Keun Yong Ban, Takhee Lee, J. S. Kwak, Y. Park, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10^-4 Ω cm² when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

Original language	English
Pages (from-to)	G320-G323
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	11
DOIs	https://doi.org/10.1149/1.2056467
Publication status	Published - 2005

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2056467

Cite this

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title = "Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes",

abstract = "We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.",

author = "Hong, {Woong Ki} and Song, {June O.} and Hong, {Hyun Gi} and Ban, {Keun Yong} and Takhee Lee and Kwak, {J. S.} and Y. Park and Seong, {Tae Yeon}",

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TY - JOUR

T1 - Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

AU - Hong, Woong Ki

AU - Song, June O.

AU - Hong, Hyun Gi

AU - Ban, Keun Yong

AU - Lee, Takhee

AU - Kwak, J. S.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2005

Y1 - 2005

N2 - We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

AB - We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

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Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Abstract

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