Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Woong Ki Hong; June O. Song; Hyun Gi Hong; Keun Yong Ban; Takhee Lee; J. S. Kwak; Y. Park; Tae Yeon Seong

doi:10.1149/1.2056467

Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Woong Ki Hong, June O. Song, Hyun Gi Hong, Keun Yong Ban, Takhee Lee, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10^-4 Ω cm² when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

Original language	English
Pages (from-to)	G320-G323
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	11
DOIs	https://doi.org/10.1149/1.2056467
Publication status	Published - 2005

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes",

abstract = "We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.",

author = "Hong, {Woong Ki} and Song, {June O.} and Hong, {Hyun Gi} and Ban, {Keun Yong} and Takhee Lee and Kwak, {J. S.} and Y. Park and Seong, {Tae Yeon}",

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journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

AU - Hong, Woong Ki

AU - Song, June O.

AU - Hong, Hyun Gi

AU - Ban, Keun Yong

AU - Lee, Takhee

AU - Kwak, J. S.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2005

Y1 - 2005

N2 - We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

AB - We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Abstract

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