We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2005|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering