Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Woong Ki Hong, June O. Song, Hyun Gi Hong, Keun Yong Ban, Takhee Lee, J. S. Kwak, Y. Park, Tae Yeon Seong

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)

    Abstract

    We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

    Original languageEnglish
    Pages (from-to)G320-G323
    JournalElectrochemical and Solid-State Letters
    Volume8
    Issue number11
    DOIs
    Publication statusPublished - 2005

    ASJC Scopus subject areas

    • General Chemical Engineering
    • General Materials Science
    • Physical and Theoretical Chemistry
    • Electrochemistry
    • Electrical and Electronic Engineering

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