Abstract
We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 × 10-4 Ω cm2. After annealing at 250 °C, unlike the untreated sample, the laser-annealed samples remain Ohmic with specific contact resistances of 2.6-3.9 × 10-4 Ωcm 2. The laser-annealed samples remain electrically stable up to 60 min at 300 °C. Laser-annealing causes the formation of interfacial TiN/\beta -AlN phases with rock salt structure. Based on X-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic mechanisms are described.
Original language | English |
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Article number | 6026227 |
Pages (from-to) | 1784-1786 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 23 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2011 |
Keywords
- Contact
- laser annealing
- light-emitting diodes (LEDs)
- semiconductor-metal interfaces
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering