Highly reliable ohmic contacts to N-polar n-type GaN for high-power vertical light-emitting diodes

Joon Woo Jeon, Sang Youl Lee, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 × 10-4 Ω cm2. After annealing at 250 °C, unlike the untreated sample, the laser-annealed samples remain Ohmic with specific contact resistances of 2.6-3.9 × 10-4 Ωcm 2. The laser-annealed samples remain electrically stable up to 60 min at 300 °C. Laser-annealing causes the formation of interfacial TiN/\beta -AlN phases with rock salt structure. Based on X-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic mechanisms are described.

Original languageEnglish
Article number6026227
Pages (from-to)1784-1786
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number23
Publication statusPublished - 2011

Bibliographical note

Funding Information:
Manuscript received August 01, 2011; revised August 16, 2011; accepted September 14, 2011. Date of publication September 22, 2011; date of current version November 09, 2011. This work was supported by the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0) and the Industrial Technology Development Program funded by the MKE, Korea.


  • Contact
  • laser annealing
  • light-emitting diodes (LEDs)
  • semiconductor-metal interfaces

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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