Highly reliable ohmic contacts to N-polar n-type GaN for high-power vertical light-emitting diodes

Joon Woo Jeon; Sang Youl Lee; June O. Song; Tae Yeon Seong

doi:10.1109/LPT.2011.2169399

Highly reliable ohmic contacts to N-polar n-type GaN for high-power vertical light-emitting diodes

Joon Woo Jeon, Sang Youl Lee, June O. Song, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 × 10^-4 Ω cm². After annealing at 250 °C, unlike the untreated sample, the laser-annealed samples remain Ohmic with specific contact resistances of 2.6-3.9 × 10^-4 Ωcm ². The laser-annealed samples remain electrically stable up to 60 min at 300 °C. Laser-annealing causes the formation of interfacial TiN/\beta -AlN phases with rock salt structure. Based on X-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic mechanisms are described.

Original language	English
Article number	6026227
Pages (from-to)	1784-1786
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	23
DOIs	https://doi.org/10.1109/LPT.2011.2169399
Publication status	Published - 2011

Keywords

Contact
laser annealing
light-emitting diodes (LEDs)
semiconductor-metal interfaces

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2011.2169399

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title = "Highly reliable ohmic contacts to N-polar n-type GaN for high-power vertical light-emitting diodes",

abstract = "We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 × 10-4 Ω cm2. After annealing at 250 °C, unlike the untreated sample, the laser-annealed samples remain Ohmic with specific contact resistances of 2.6-3.9 × 10-4 Ωcm 2. The laser-annealed samples remain electrically stable up to 60 min at 300 °C. Laser-annealing causes the formation of interfacial TiN/\beta -AlN phases with rock salt structure. Based on X-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic mechanisms are described.",

keywords = "Contact, laser annealing, light-emitting diodes (LEDs), semiconductor-metal interfaces",

author = "Jeon, {Joon Woo} and Lee, {Sang Youl} and Song, {June O.} and Seong, {Tae Yeon}",

note = "Funding Information: Manuscript received August 01, 2011; revised August 16, 2011; accepted September 14, 2011. Date of publication September 22, 2011; date of current version November 09, 2011. This work was supported by the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0) and the Industrial Technology Development Program funded by the MKE, Korea.",

year = "2011",

doi = "10.1109/LPT.2011.2169399",

language = "English",

volume = "23",

pages = "1784--1786",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Highly reliable ohmic contacts to N-polar n-type GaN for high-power vertical light-emitting diodes

AU - Jeon, Joon Woo

AU - Lee, Sang Youl

AU - Song, June O.

AU - Seong, Tae Yeon

N1 - Funding Information: Manuscript received August 01, 2011; revised August 16, 2011; accepted September 14, 2011. Date of publication September 22, 2011; date of current version November 09, 2011. This work was supported by the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0) and the Industrial Technology Development Program funded by the MKE, Korea.

PY - 2011

Y1 - 2011

N2 - We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 × 10-4 Ω cm2. After annealing at 250 °C, unlike the untreated sample, the laser-annealed samples remain Ohmic with specific contact resistances of 2.6-3.9 × 10-4 Ωcm 2. The laser-annealed samples remain electrically stable up to 60 min at 300 °C. Laser-annealing causes the formation of interfacial TiN/\beta -AlN phases with rock salt structure. Based on X-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic mechanisms are described.

AB - We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 × 10-4 Ω cm2. After annealing at 250 °C, unlike the untreated sample, the laser-annealed samples remain Ohmic with specific contact resistances of 2.6-3.9 × 10-4 Ωcm 2. The laser-annealed samples remain electrically stable up to 60 min at 300 °C. Laser-annealing causes the formation of interfacial TiN/\beta -AlN phases with rock salt structure. Based on X-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic mechanisms are described.

KW - Contact

KW - laser annealing

KW - light-emitting diodes (LEDs)

KW - semiconductor-metal interfaces

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DO - 10.1109/LPT.2011.2169399

M3 - Article

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JO - IEEE Photonics Technology Letters

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ER -

Highly reliable ohmic contacts to N-polar n-type GaN for high-power vertical light-emitting diodes

Abstract

Keywords

ASJC Scopus subject areas

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