Keyphrases
Light-emitting Diodes
100%
Vertical Geometry
100%
Ohmic Contact
100%
N-type GaN
100%
Nitrogen-polar (N-polar)
100%
Highly Reliable
100%
Al-Au
100%
Barrier Layer
100%
Ti-based
100%
TiAl
83%
Annealing
50%
Au Contacts
50%
Ti-Ta
50%
Al-based
33%
Thermally Stable
33%
High Output Power
16%
High Power
16%
Electrical Characteristics
16%
Specific Contact Resistance
16%
X-ray Photoemission Spectroscopy
16%
Ohmic Behavior
16%
N-GaN
16%
Diffusion Barrier
16%
Low Resistance
16%
Vertical Light-emitting Diodes
16%
Annealing Time
16%
Stable Resistance
16%
Al-Ti
16%
Power Vertical
16%
Engineering
Ohmic Contacts
100%
Barrier Layer
100%
Output Power
50%
Light-Emitting Diode
50%
Photoemission
50%
Diffusion Barrier
50%
Annealing Time
50%
Physics
Photoelectric Emission
100%
Light Emitting Diode
100%
X Ray Spectroscopy
100%
Surface Properties
100%
Earth and Planetary Sciences
Contact Resistance
100%
Barrier Layer
100%