Abstract
GaN, AlxGa1-xN and InxGa1-xN were prepared by dry etching with Cl2/Ar/O2 plasma. The etch rates and selectivities were determined for the nitrides using an inductively-coupled plasma reactor. Results showed that the oxygen flow rate and the plasma parameters significantly affected the etch characteristics of the semiconductors.
Original language | English |
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Pages (from-to) | 1409-1411 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 18 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2000 May |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering