Highly selective dry etching of III nitrides using an inductively coupled Cl2/Ar/O2 plasma

Ji Myon Lee; Ki Myung Chang; In Hwan Lee; Seong Ju Park

doi:10.1116/1.591394

Highly selective dry etching of III nitrides using an inductively coupled Cl₂/Ar/O₂ plasma

Ji Myon Lee, Ki Myung Chang, In Hwan Lee, Seong Ju Park

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

GaN, Al_xGa_1-xN and In_xGa_1-xN were prepared by dry etching with Cl₂/Ar/O₂ plasma. The etch rates and selectivities were determined for the nitrides using an inductively-coupled plasma reactor. Results showed that the oxygen flow rate and the plasma parameters significantly affected the etch characteristics of the semiconductors.

Original language	English
Pages (from-to)	1409-1411
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591394
Publication status	Published - 2000 May
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "GaN, AlxGa1-xN and InxGa1-xN were prepared by dry etching with Cl2/Ar/O2 plasma. The etch rates and selectivities were determined for the nitrides using an inductively-coupled plasma reactor. Results showed that the oxygen flow rate and the plasma parameters significantly affected the etch characteristics of the semiconductors.",

author = "Lee, {Ji Myon} and Chang, {Ki Myung} and Lee, {In Hwan} and Park, {Seong Ju}",

year = "2000",

month = may,

doi = "10.1116/1.591394",

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AU - Lee, Ji Myon

AU - Chang, Ki Myung

AU - Lee, In Hwan

AU - Park, Seong Ju

PY - 2000/5

Y1 - 2000/5

N2 - GaN, AlxGa1-xN and InxGa1-xN were prepared by dry etching with Cl2/Ar/O2 plasma. The etch rates and selectivities were determined for the nitrides using an inductively-coupled plasma reactor. Results showed that the oxygen flow rate and the plasma parameters significantly affected the etch characteristics of the semiconductors.

AB - GaN, AlxGa1-xN and InxGa1-xN were prepared by dry etching with Cl2/Ar/O2 plasma. The etch rates and selectivities were determined for the nitrides using an inductively-coupled plasma reactor. Results showed that the oxygen flow rate and the plasma parameters significantly affected the etch characteristics of the semiconductors.

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Highly selective dry etching of III nitrides using an inductively coupled Cl₂/Ar/O₂ plasma

Abstract

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