Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN

Dae Hyun Kim; Weon Cheol Lim; Jae Seong Park; Tae Yeon Seong

doi:10.1016/j.jallcom.2013.11.044

Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN

Dae Hyun Kim, Weon Cheol Lim, Jae Seong Park, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85% at 450 nm, which is higher than that of Ag-only contacts (57%) after annealing at 500 C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 C were 2.4 × 10^-4 and 6.1 × 10^-5 Ω cm², respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20% higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.

Original language	English
Pages (from-to)	327-331
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	588
DOIs	https://doi.org/10.1016/j.jallcom.2013.11.044
Publication status	Published - 2014 Mar 5

Keywords

Electrode materials
Light absorption and reflection
Metals and alloys
Optical properties
Surfaces and interfaces

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2013.11.044

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@article{0a077157dde445d882d508ec920a3dad,

title = "Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN",

abstract = "Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85% at 450 nm, which is higher than that of Ag-only contacts (57%) after annealing at 500 C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 C were 2.4 × 10-4 and 6.1 × 10-5 Ω cm2, respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20% higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.",

keywords = "Electrode materials, Light absorption and reflection, Metals and alloys, Optical properties, Surfaces and interfaces",

author = "Kim, {Dae Hyun} and Lim, {Weon Cheol} and Park, {Jae Seong} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the industrial technology development program funded by the Ministry of Knowledge Economy (MKE), Korea and the industrial strategic technology development program, 10041878, development of WPE 75% LED device process and standard evaluation technology funded by the MKE, Korea.",

year = "2014",

month = mar,

day = "5",

doi = "10.1016/j.jallcom.2013.11.044",

language = "English",

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pages = "327--331",

journal = "Journal of Alloys and Compounds",

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TY - JOUR

T1 - Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN

AU - Kim, Dae Hyun

AU - Lim, Weon Cheol

AU - Park, Jae Seong

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the industrial technology development program funded by the Ministry of Knowledge Economy (MKE), Korea and the industrial strategic technology development program, 10041878, development of WPE 75% LED device process and standard evaluation technology funded by the MKE, Korea.

PY - 2014/3/5

Y1 - 2014/3/5

N2 - Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85% at 450 nm, which is higher than that of Ag-only contacts (57%) after annealing at 500 C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 C were 2.4 × 10-4 and 6.1 × 10-5 Ω cm2, respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20% higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.

AB - Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85% at 450 nm, which is higher than that of Ag-only contacts (57%) after annealing at 500 C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 C were 2.4 × 10-4 and 6.1 × 10-5 Ω cm2, respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20% higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.

KW - Electrode materials

KW - Light absorption and reflection

KW - Metals and alloys

KW - Optical properties

KW - Surfaces and interfaces

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DO - 10.1016/j.jallcom.2013.11.044

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VL - 588

SP - 327

EP - 331

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN

Abstract

Keywords

ASJC Scopus subject areas

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