Highly transparent AgSn O2 ohmic contact to p -type GaN for ultraviolet light-emitting diodes

June O. Song; Tae Yeon Seong

doi:10.1063/1.1834990

Highly transparent AgSn O2 ohmic contact to p -type GaN for ultraviolet light-emitting diodes

June O. Song, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

We report on the formation of highly transparent and low-resistance Ag (3 nm) Sb -doped Sn O2 (ATO) (200 nm) ohmic contacts to p-GaN (5× 1017 cm-3). It is shown that the samples become ohmic with a specific contact resistance of 8.7× 10-5 Ω cm2 upon annealing at 530 °C for 1 min in air. The oxidized contacts produce an extremely high light transmittance of 99% at a wavelength of 400 nm. The light-emitting diodes (LEDs) fabricated with the annealed Ag/ATO p -type contact layers give a forward-bias voltage of 3.42 V at injection current of 20 mA, which is better than that of LEDs with the most common oxidized Ni (5 nm) Au (5 nm) contact layers. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the ohmic formation mechanisms are discussed.

Original language	English
Pages (from-to)	6374-6376
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	26
DOIs	https://doi.org/10.1063/1.1834990
Publication status	Published - 2004 Dec 27
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant No. (KRF-2003-042-D00131). The authors would like to thank Dr. J. S. Kwak (Samsung Advanced Institute of Technology) for the samples.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1834990

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title = "Highly transparent AgSn O2 ohmic contact to p -type GaN for ultraviolet light-emitting diodes",

abstract = "We report on the formation of highly transparent and low-resistance Ag (3 nm) Sb -doped Sn O2 (ATO) (200 nm) ohmic contacts to p-GaN (5× 1017 cm-3). It is shown that the samples become ohmic with a specific contact resistance of 8.7× 10-5 Ω cm2 upon annealing at 530 °C for 1 min in air. The oxidized contacts produce an extremely high light transmittance of 99% at a wavelength of 400 nm. The light-emitting diodes (LEDs) fabricated with the annealed Ag/ATO p -type contact layers give a forward-bias voltage of 3.42 V at injection current of 20 mA, which is better than that of LEDs with the most common oxidized Ni (5 nm) Au (5 nm) contact layers. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the ohmic formation mechanisms are discussed.",

author = "Song, {June O.} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant No. (KRF-2003-042-D00131). The authors would like to thank Dr. J. S. Kwak (Samsung Advanced Institute of Technology) for the samples.",

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T1 - Highly transparent AgSn O2 ohmic contact to p -type GaN for ultraviolet light-emitting diodes

AU - Song, June O.

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by Korea Research Foundation Grant No. (KRF-2003-042-D00131). The authors would like to thank Dr. J. S. Kwak (Samsung Advanced Institute of Technology) for the samples.

PY - 2004/12/27

Y1 - 2004/12/27

N2 - We report on the formation of highly transparent and low-resistance Ag (3 nm) Sb -doped Sn O2 (ATO) (200 nm) ohmic contacts to p-GaN (5× 1017 cm-3). It is shown that the samples become ohmic with a specific contact resistance of 8.7× 10-5 Ω cm2 upon annealing at 530 °C for 1 min in air. The oxidized contacts produce an extremely high light transmittance of 99% at a wavelength of 400 nm. The light-emitting diodes (LEDs) fabricated with the annealed Ag/ATO p -type contact layers give a forward-bias voltage of 3.42 V at injection current of 20 mA, which is better than that of LEDs with the most common oxidized Ni (5 nm) Au (5 nm) contact layers. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the ohmic formation mechanisms are discussed.

AB - We report on the formation of highly transparent and low-resistance Ag (3 nm) Sb -doped Sn O2 (ATO) (200 nm) ohmic contacts to p-GaN (5× 1017 cm-3). It is shown that the samples become ohmic with a specific contact resistance of 8.7× 10-5 Ω cm2 upon annealing at 530 °C for 1 min in air. The oxidized contacts produce an extremely high light transmittance of 99% at a wavelength of 400 nm. The light-emitting diodes (LEDs) fabricated with the annealed Ag/ATO p -type contact layers give a forward-bias voltage of 3.42 V at injection current of 20 mA, which is better than that of LEDs with the most common oxidized Ni (5 nm) Au (5 nm) contact layers. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the ohmic formation mechanisms are discussed.

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DO - 10.1063/1.1834990

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VL - 85

SP - 6374

EP - 6376

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Highly transparent AgSn O2 ohmic contact to p -type GaN for ultraviolet light-emitting diodes

Abstract

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