Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

S. W. Chae; K. C. Kim; D. H. Kim; T. G. Kim; S. K. Yoon; B. W. Oh; D. S. Kim; H. K. Kim; Y. M. Sung

doi:10.1063/1.2731672

Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

S. W. Chae, K. C. Kim, D. H. Kim, T. G. Kim, S. K. Yoon, B. W. Oh, D. S. Kim, H. K. Kim, Y. M. Sung

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.

Original language	English
Article number	181101
Journal	Applied Physics Letters
Volume	90
Issue number	18
DOIs	https://doi.org/10.1063/1.2731672
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea. This work was also supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-331-D00317).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN",

abstract = "The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.",

author = "Chae, {S. W.} and Kim, {K. C.} and Kim, {D. H.} and Kim, {T. G.} and Yoon, {S. K.} and Oh, {B. W.} and Kim, {D. S.} and Kim, {H. K.} and Sung, {Y. M.}",

note = "Funding Information: This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea. This work was also supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-331-D00317).",

year = "2007",

doi = "10.1063/1.2731672",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

AU - Chae, S. W.

AU - Kim, K. C.

AU - Kim, D. H.

AU - Kim, T. G.

AU - Yoon, S. K.

AU - Oh, B. W.

AU - Kim, D. S.

AU - Kim, H. K.

AU - Sung, Y. M.

N1 - Funding Information: This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea. This work was also supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-331-D00317).

PY - 2007

Y1 - 2007

N2 - The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.

AB - The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.

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U2 - 10.1063/1.2731672

DO - 10.1063/1.2731672

M3 - Article

AN - SCOPUS:34247862381

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181101

ER -

Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

Abstract

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