Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

S. W. Chae; K. C. Kim; D. H. Kim; T. G. Kim; S. K. Yoon; B. W. Oh; D. S. Kim; H. K. Kim; Y. M. Sung

doi:10.1063/1.2731672

Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

S. W. Chae
, K. C. Kim
, D. H. Kim
, T. G. Kim^*
, S. K. Yoon
, B. W. Oh
, D. S. Kim
, H. K. Kim
, Y. M. Sung

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.

Original language	English
Article number	181101
Journal	Applied Physics Letters
Volume	90
Issue number	18
DOIs	https://doi.org/10.1063/1.2731672
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea. This work was also supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-331-D00317).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2731672

Cite this

@article{9e2ff8cc5125485b8586e4d26fd19af4,

title = "Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN",

abstract = "The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90\% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.",

author = "Chae, \{S. W.\} and Kim, \{K. C.\} and Kim, \{D. H.\} and Kim, \{T. G.\} and Yoon, \{S. K.\} and Oh, \{B. W.\} and Kim, \{D. S.\} and Kim, \{H. K.\} and Sung, \{Y. M.\}",

note = "Funding Information: This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea. This work was also supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-331-D00317).",

year = "2007",

doi = "10.1063/1.2731672",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

AU - Chae, S. W.

AU - Kim, K. C.

AU - Kim, D. H.

AU - Kim, T. G.

AU - Yoon, S. K.

AU - Oh, B. W.

AU - Kim, D. S.

AU - Kim, H. K.

AU - Sung, Y. M.

N1 - Funding Information: This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea. This work was also supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-331-D00317).

PY - 2007

Y1 - 2007

N2 - The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.

AB - The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.

UR - https://www.scopus.com/pages/publications/34247862381

U2 - 10.1063/1.2731672

DO - 10.1063/1.2731672

M3 - Article

AN - SCOPUS:34247862381

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181101

ER -

Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this