Highly transparent conductive Ag/Ga2O3 electrode for near-ultraviolet light-emitting diodes

Kie Young Woo; Jae Hoon Lee; Kyeong Heon Kim; Su Jin Kim; Tae Geun Kim

doi:10.1002/pssa.201330495

Highly transparent conductive Ag/Ga₂O₃ electrode for near-ultraviolet light-emitting diodes

Kie Young Woo, Jae Hoon Lee, Kyeong Heon Kim, Su Jin Kim, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We fabricated an Ag/Ga₂O₃ bilayer as a highly transparent conductive electrode for near-ultraviolet (NUV) light-emitting diodes (LEDs). The bilayer showed nonohmic characteristics because the as-deposited Ga₂O₃ film is an insulator. However, the bilayer thermally annealed in ambient air and N₂ at 550°C for 1 min showed ohmic-like current-voltage characteristics including specific contact resistances of 3.06 × 10^-2 and 7.34 × 10^-2 Ω cm², respectively. The optical transmittance and sheet resistance of the bilayer were about 91% and <42 Ω/□ at 380 nm. The results suggest that the Ag/Ga₂O₃ bilayer is suitable for application as a p-type electrode in NUV-LEDs.

Original language	English
Pages (from-to)	1760-1763
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	211
Issue number	8
DOIs	https://doi.org/10.1002/pssa.201330495
Publication status	Published - 2014 Aug

Keywords

light-emitting diodes
silver
transparent conductive electrodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.201330495

Cite this

@article{554bc96f1f5244a8900731871fc37753,

title = "Highly transparent conductive Ag/Ga2O3 electrode for near-ultraviolet light-emitting diodes",

abstract = "We fabricated an Ag/Ga2O3 bilayer as a highly transparent conductive electrode for near-ultraviolet (NUV) light-emitting diodes (LEDs). The bilayer showed nonohmic characteristics because the as-deposited Ga2O3 film is an insulator. However, the bilayer thermally annealed in ambient air and N2 at 550°C for 1 min showed ohmic-like current-voltage characteristics including specific contact resistances of 3.06 × 10-2 and 7.34 × 10-2 Ω cm2, respectively. The optical transmittance and sheet resistance of the bilayer were about 91% and <42 Ω/□ at 380 nm. The results suggest that the Ag/Ga2O3 bilayer is suitable for application as a p-type electrode in NUV-LEDs.",

keywords = "light-emitting diodes, silver, transparent conductive electrodes",

author = "Woo, {Kie Young} and Lee, {Jae Hoon} and Kim, {Kyeong Heon} and Kim, {Su Jin} and Kim, {Tae Geun}",

year = "2014",

month = aug,

doi = "10.1002/pssa.201330495",

language = "English",

volume = "211",

pages = "1760--1763",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "8",

}

TY - JOUR

T1 - Highly transparent conductive Ag/Ga2O3 electrode for near-ultraviolet light-emitting diodes

AU - Woo, Kie Young

AU - Lee, Jae Hoon

AU - Kim, Kyeong Heon

AU - Kim, Su Jin

AU - Kim, Tae Geun

PY - 2014/8

Y1 - 2014/8

N2 - We fabricated an Ag/Ga2O3 bilayer as a highly transparent conductive electrode for near-ultraviolet (NUV) light-emitting diodes (LEDs). The bilayer showed nonohmic characteristics because the as-deposited Ga2O3 film is an insulator. However, the bilayer thermally annealed in ambient air and N2 at 550°C for 1 min showed ohmic-like current-voltage characteristics including specific contact resistances of 3.06 × 10-2 and 7.34 × 10-2 Ω cm2, respectively. The optical transmittance and sheet resistance of the bilayer were about 91% and <42 Ω/□ at 380 nm. The results suggest that the Ag/Ga2O3 bilayer is suitable for application as a p-type electrode in NUV-LEDs.

AB - We fabricated an Ag/Ga2O3 bilayer as a highly transparent conductive electrode for near-ultraviolet (NUV) light-emitting diodes (LEDs). The bilayer showed nonohmic characteristics because the as-deposited Ga2O3 film is an insulator. However, the bilayer thermally annealed in ambient air and N2 at 550°C for 1 min showed ohmic-like current-voltage characteristics including specific contact resistances of 3.06 × 10-2 and 7.34 × 10-2 Ω cm2, respectively. The optical transmittance and sheet resistance of the bilayer were about 91% and <42 Ω/□ at 380 nm. The results suggest that the Ag/Ga2O3 bilayer is suitable for application as a p-type electrode in NUV-LEDs.

KW - light-emitting diodes

KW - silver

KW - transparent conductive electrodes

UR - http://www.scopus.com/inward/record.url?scp=84905986590&partnerID=8YFLogxK

U2 - 10.1002/pssa.201330495

DO - 10.1002/pssa.201330495

M3 - Article

AN - SCOPUS:84905986590

SN - 1862-6300

VL - 211

SP - 1760

EP - 1763

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 8

ER -