Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Jong Hyun Kim; Seung Geun Kim; Seung Hwan Kim; Kyu Hyun Han; Jiyoung Kim; Hyun Yong Yu

doi:10.1021/acsami.3c03213

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Jong Hyun Kim, Seung Geun Kim, Seung Hwan Kim, Kyu Hyun Han, Jiyoung Kim, Hyun Yong Yu

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO₂) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (J_peak) as well as controllable peak and valley voltages (V_peak/valley). When a phase transition is induced in VO₂, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO₂ resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO₂ threshold voltage tunability characteristics. Moreover, V_peak/valley is easily modulated by controlling the length of VO₂. In addition, a maximum J_peak of 1.6 × 10⁶ A/m² is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.

Original language	English
Pages (from-to)	31608-31616
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	26
DOIs	https://doi.org/10.1021/acsami.3c03213
Publication status	Published - 2023 Jul 5

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

insulator-to-metal transition
negative differential resistance
peak current density
peak-to-valley current ratio
vanadium dioxide

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.3c03213

Cite this

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title = "Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide",

abstract = "Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (Jpeak) as well as controllable peak and valley voltages (Vpeak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, Vpeak/valley is easily modulated by controlling the length of VO2. In addition, a maximum Jpeak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.",

keywords = "insulator-to-metal transition, negative differential resistance, peak current density, peak-to-valley current ratio, vanadium dioxide",

author = "Kim, {Jong Hyun} and Kim, {Seung Geun} and Kim, {Seung Hwan} and Han, {Kyu Hyun} and Jiyoung Kim and Yu, {Hyun Yong}",

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AU - Kim, Jong Hyun

AU - Kim, Seung Geun

AU - Kim, Seung Hwan

AU - Han, Kyu Hyun

AU - Kim, Jiyoung

AU - Yu, Hyun Yong

PY - 2023/7/5

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AB - Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (Jpeak) as well as controllable peak and valley voltages (Vpeak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, Vpeak/valley is easily modulated by controlling the length of VO2. In addition, a maximum Jpeak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.

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KW - peak-to-valley current ratio

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Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Abstract

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