TY - JOUR
T1 - Hole injection mechanism in the quantum wells of blue light emitting diode with v pits for micro-display application
AU - Kang, Daesung
AU - Oh, Jeong Tak
AU - Song, June O.
AU - Seong, Tae Yeon
AU - Kneissl, Michael
AU - Amano, Hiroshi
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The current injection mechanisms for blue light emitting diodes (LEDs) with and without V pits were examined by controlling the bandgaps of InGaN quantum wells (QWs), which were changed by reducing the indium content. To identify the distribution of holes in the QWs, the electroluminescence of the LEDs was characterized by varying the positions of the QWs with the wider bandgap consecutively from n-cladding to p-cladding sides. For the LEDs without V pits, holes were injected through the top QWs (p-cladding side), while for the LEDs with V pits, holes were injected mainly through the bottom QWs (n-cladding side).
AB - The current injection mechanisms for blue light emitting diodes (LEDs) with and without V pits were examined by controlling the bandgaps of InGaN quantum wells (QWs), which were changed by reducing the indium content. To identify the distribution of holes in the QWs, the electroluminescence of the LEDs was characterized by varying the positions of the QWs with the wider bandgap consecutively from n-cladding to p-cladding sides. For the LEDs without V pits, holes were injected through the top QWs (p-cladding side), while for the LEDs with V pits, holes were injected mainly through the bottom QWs (n-cladding side).
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U2 - 10.7567/1882-0786/ab45d1
DO - 10.7567/1882-0786/ab45d1
M3 - Article
AN - SCOPUS:85076244329
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 10
M1 - 102016
ER -