Hole magnetoplasmons in semiconductor heterostructures

S. R.Eric Yang, A. H. MacDonald

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The hole magnetoplasmon dispersion of GaAs/AlxGa1-xAs heterostructures is calculated in a time-dependent Hartree-Fock approximation. We find that cyclotron-resonance positions are significantly shifted by hole-hole interactions and that the hole magnetoplasmon dispersion increases monotonically with wave vector. Both results differ from the case of an electron gas, where cyclotron-resonance-position shifts are forbidden by Kohns theorem, and are consequences of strong heavy- and light-hole mixing.

Original languageEnglish
Pages (from-to)1294-1297
Number of pages4
JournalPhysical Review B
Volume41
Issue number2
DOIs
Publication statusPublished - 1990
Externally publishedYes

Bibliographical note

Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Hole magnetoplasmons in semiconductor heterostructures'. Together they form a unique fingerprint.

Cite this