Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

S. R. Eric Yang, D. A. Broido, L. J. Sham

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.

Original languageEnglish
Pages (from-to)6630-6633
Number of pages4
JournalPhysical Review B
Issue number10
Publication statusPublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields'. Together they form a unique fingerprint.

Cite this