Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

S. R. Eric Yang; D. A. Broido; L. J. Sham

doi:10.1103/PhysRevB.32.6630

Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

S. R. Eric Yang, D. A. Broido, L. J. Sham

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.

Original language	English
Pages (from-to)	6630-6633
Number of pages	4
Journal	Physical Review B
Volume	32
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.32.6630
Publication status	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.32.6630

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title = "Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields",

abstract = "The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.",

author = "{Eric Yang}, {S. R.} and Broido, {D. A.} and Sham, {L. J.}",

year = "1985",

doi = "10.1103/PhysRevB.32.6630",

language = "English",

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journal = "Physical Review B",

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T1 - Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

AU - Eric Yang, S. R.

AU - Broido, D. A.

AU - Sham, L. J.

PY - 1985

Y1 - 1985

N2 - The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.

AB - The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.

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DO - 10.1103/PhysRevB.32.6630

M3 - Article

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ER -

Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

Abstract

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