Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

S. R. Eric Yang; D. A. Broido; L. J. Sham

doi:10.1103/PhysRevB.32.6630

Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

S. R. Eric Yang^*
, D. A. Broido
, L. J. Sham

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.

Original language	English
Pages (from-to)	6630-6633
Number of pages	4
Journal	Physical Review B
Volume	32
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.32.6630
Publication status	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.32.6630

Cite this

@article{1318ead8d4a24873adca2aea8145aa17,

title = "Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields",

abstract = "The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.",

author = "\{Eric Yang\}, \{S. R.\} and Broido, \{D. A.\} and Sham, \{L. J.\}",

year = "1985",

doi = "10.1103/PhysRevB.32.6630",

language = "English",

volume = "32",

pages = "6630--6633",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "10",

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T1 - Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

AU - Eric Yang, S. R.

AU - Broido, D. A.

AU - Sham, L. J.

PY - 1985

Y1 - 1985

N2 - The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.

AB - The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.

UR - https://www.scopus.com/pages/publications/0001652953

U2 - 10.1103/PhysRevB.32.6630

DO - 10.1103/PhysRevB.32.6630

M3 - Article

AN - SCOPUS:0001652953

SN - 0163-1829

VL - 32

SP - 6630

EP - 6633

JO - Physical Review B

JF - Physical Review B

IS - 10

ER -

Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

Abstract

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