Abstract
Ag nanowires (Ag NWs) were combined with a thin indium tin oxide (ITO) film as the p-type electrode in near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs) to improve the light output power. The Ag NWs (30 ± 5 nm in diameter and 25 ± 5 μm long) were dispersed in ethanol (0.3 wt%). The transmittances of 10 nm-thick ITO, ITO/Ag NWs coated at 1000 rpm, and ITO/Ag NWs coated at 3000 rpm were 98%, 90%, and 97% at 385 nm, respectively. LEDs (chip size: 300 × 800 μm2) fabricated with the ITO/Ag NW electrode exhibited higher forward-bias voltages than the LEDs with the ITO-only electrode. However, LEDs with ITO/Ag NWs films coated at 1000 and 3000 rpm yielded 7.9 and 14.0% higher light output power, respectively, at 100 mA than the LED with ITO-only electrode. The improved output power with the ITO/Ag NWs films is attributed to an optimal trade-off between optical transmittance and current spreading.
Original language | English |
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Pages (from-to) | 545-548 |
Number of pages | 4 |
Journal | Current Applied Physics |
Volume | 16 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2016 May 1 |
Bibliographical note
Funding Information:This work was supported by the Brain Korea 21 plus program funded by the Ministry of Science, ICT, and Future Planning, Korea .
Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
Keywords
- Current spreading
- Near ultraviolet light-emitting diodes
- Silver nanowires
ASJC Scopus subject areas
- General Materials Science
- General Physics and Astronomy