Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

In Yeal Lee; Hyung Youl Park; Jin Hyung Park; Jinyeong Lee; Woo Shik Jung; Hyun Yong Yu; Sang Woo Kim; Gil Ho Kim; Jin Hong Park

doi:10.1016/j.orgel.2013.03.022

Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

In Yeal Lee, Hyung Youl Park, Jin Hyung Park, Jinyeong Lee, Woo Shik Jung, Hyun Yong Yu, Sang Woo Kim, Gil Ho Kim, Jin Hong Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N₂H₄-H₂O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

Original language	English
Pages (from-to)	1586-1590
Number of pages	5
Journal	Organic Electronics
Volume	14
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2013.03.022
Publication status	Published - 2013 Jun

Bibliographical note

Funding Information:
This research was supported by (1) Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ) and (2) World Class University program funded by the Ministry of Education, Science and Technology through the National Research Foundation of Korea ( R32-10204 ).

Keywords

Graphene
Hydrazine
Inverter
N-doping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Biomaterials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.orgel.2013.03.022

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title = "Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter",

abstract = "In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.",

keywords = "Graphene, Hydrazine, Inverter, N-doping",

author = "Lee, {In Yeal} and Park, {Hyung Youl} and Park, {Jin Hyung} and Jinyeong Lee and Jung, {Woo Shik} and Yu, {Hyun Yong} and Kim, {Sang Woo} and Kim, {Gil Ho} and Park, {Jin Hong}",

note = "Funding Information: This research was supported by (1) Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ) and (2) World Class University program funded by the Ministry of Education, Science and Technology through the National Research Foundation of Korea ( R32-10204 ).",

year = "2013",

month = jun,

doi = "10.1016/j.orgel.2013.03.022",

language = "English",

volume = "14",

pages = "1586--1590",

journal = "Organic Electronics",

issn = "1566-1199",

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T1 - Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

AU - Lee, In Yeal

AU - Park, Hyung Youl

AU - Park, Jin Hyung

AU - Lee, Jinyeong

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

AU - Kim, Sang Woo

AU - Kim, Gil Ho

AU - Park, Jin Hong

N1 - Funding Information: This research was supported by (1) Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ) and (2) World Class University program funded by the Ministry of Education, Science and Technology through the National Research Foundation of Korea ( R32-10204 ).

PY - 2013/6

Y1 - 2013/6

N2 - In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

AB - In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

KW - Graphene

KW - Hydrazine

KW - Inverter

KW - N-doping

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U2 - 10.1016/j.orgel.2013.03.022

DO - 10.1016/j.orgel.2013.03.022

M3 - Article

AN - SCOPUS:84876189370

SN - 1566-1199

VL - 14

SP - 1586

EP - 1590

JO - Organic Electronics

JF - Organic Electronics

IS - 6

ER -

Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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