Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

  • In Yeal Lee
  • , Hyung Youl Park
  • , Jin Hyung Park
  • , Jinyeong Lee
  • , Woo Shik Jung
  • , Hyun Yong Yu
  • , Sang Woo Kim
  • , Gil Ho Kim*
  • , Jin Hong Park
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

    Original languageEnglish
    Pages (from-to)1586-1590
    Number of pages5
    JournalOrganic Electronics
    Volume14
    Issue number6
    DOIs
    Publication statusPublished - 2013 Jun

    Bibliographical note

    Funding Information:
    This research was supported by (1) Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ) and (2) World Class University program funded by the Ministry of Education, Science and Technology through the National Research Foundation of Korea ( R32-10204 ).

    Keywords

    • Graphene
    • Hydrazine
    • Inverter
    • N-doping

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • General Chemistry
    • Biomaterials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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