Abstract
In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 1586-1590 |
| Number of pages | 5 |
| Journal | Organic Electronics |
| Volume | 14 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2013 Jun |
Bibliographical note
Funding Information:This research was supported by (1) Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2011-0007997 ) and (2) World Class University program funded by the Ministry of Education, Science and Technology through the National Research Foundation of Korea ( R32-10204 ).
Keywords
- Graphene
- Hydrazine
- Inverter
- N-doping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Biomaterials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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