Hydrogen in polycrystalline ZnO thin films

W. M. Kim; Y. H. Kim; J. S. Kim; J. Jeong; Y. J. Baik; J. K. Park; K. S. Lee; T. Y. Seong

doi:10.1088/0022-3727/43/36/365406

Hydrogen in polycrystalline ZnO thin films

W. M. Kim, Y. H. Kim, J. S. Kim, J. Jeong, Y. J. Baik, J. K. Park, K. S. Lee, T. Y. Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The influence and the states of hydrogen in polycrystalline ZnO thin films were investigated by preparing films with different amounts of oxygen vacancies at various hydrogen potentials. The most notable effect of hydrogen addition was passivation of grain boundaries. The majority of hydrogen incorporation in polycrystalline ZnO films was attributed to hydrogen interstitials, and a substantially smaller number of multicentre bonds at oxygen vacancies were formed even at high hydrogen potentials. The major source of free carriers in polycrystalline ZnO films deposited without intentional hydrogen addition was oxygen vacancies with 2+ charge state with large atomic relaxation.

Original language	English
Article number	365406
Journal	Journal of Physics D: Applied Physics
Volume	43
Issue number	36
DOIs	https://doi.org/10.1088/0022-3727/43/36/365406
Publication status	Published - 2010 Sept 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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abstract = "The influence and the states of hydrogen in polycrystalline ZnO thin films were investigated by preparing films with different amounts of oxygen vacancies at various hydrogen potentials. The most notable effect of hydrogen addition was passivation of grain boundaries. The majority of hydrogen incorporation in polycrystalline ZnO films was attributed to hydrogen interstitials, and a substantially smaller number of multicentre bonds at oxygen vacancies were formed even at high hydrogen potentials. The major source of free carriers in polycrystalline ZnO films deposited without intentional hydrogen addition was oxygen vacancies with 2+ charge state with large atomic relaxation.",

author = "Kim, {W. M.} and Kim, {Y. H.} and Kim, {J. S.} and J. Jeong and Baik, {Y. J.} and Park, {J. K.} and Lee, {K. S.} and Seong, {T. Y.}",

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AU - Kim, W. M.

AU - Kim, Y. H.

AU - Kim, J. S.

AU - Jeong, J.

AU - Baik, Y. J.

AU - Park, J. K.

AU - Lee, K. S.

AU - Seong, T. Y.

PY - 2010/9/15

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AB - The influence and the states of hydrogen in polycrystalline ZnO thin films were investigated by preparing films with different amounts of oxygen vacancies at various hydrogen potentials. The most notable effect of hydrogen addition was passivation of grain boundaries. The majority of hydrogen incorporation in polycrystalline ZnO films was attributed to hydrogen interstitials, and a substantially smaller number of multicentre bonds at oxygen vacancies were formed even at high hydrogen potentials. The major source of free carriers in polycrystalline ZnO films deposited without intentional hydrogen addition was oxygen vacancies with 2+ charge state with large atomic relaxation.

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Hydrogen in polycrystalline ZnO thin films

Abstract

ASJC Scopus subject areas

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