Hydrogen in polycrystalline ZnO thin films

W. M. Kim, Y. H. Kim, J. S. Kim, J. Jeong, Y. J. Baik, J. K. Park, K. S. Lee, T. Y. Seong

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


The influence and the states of hydrogen in polycrystalline ZnO thin films were investigated by preparing films with different amounts of oxygen vacancies at various hydrogen potentials. The most notable effect of hydrogen addition was passivation of grain boundaries. The majority of hydrogen incorporation in polycrystalline ZnO films was attributed to hydrogen interstitials, and a substantially smaller number of multicentre bonds at oxygen vacancies were formed even at high hydrogen potentials. The major source of free carriers in polycrystalline ZnO films deposited without intentional hydrogen addition was oxygen vacancies with 2+ charge state with large atomic relaxation.

Original languageEnglish
Article number365406
JournalJournal of Physics D: Applied Physics
Issue number36
Publication statusPublished - 2010 Sept 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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