Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories

Engineering & Materials Science

• Silicon oxides 100%
• Negative bias temperature instability 99%
• Silicon nitride 83%
• Passivation 83%
• Flash memory 82%
• Hydrogen 55%
• Capacitors 54%
• Silicon 54%
• Metals 44%
• Annealing 34%
• Rapid thermal annealing 26%
• Deep level transient spectroscopy 15%
• Furnaces 15%
• Oxides 14%
• Charge density 12%
• Gases 9%
• Gas mixtures 9%
• Nitrogen 8%
• Substrates 6%

Physics & Astronomy

• silicon oxides 72%
• silicon nitrides 67%
• metal oxides 66%
• flash 66%
• passivity 64%
• capacitors 60%
• hydrogen 42%
• silicon 37%
• annealing 31%
• traps 25%
• temperature 20%
• furnaces 15%
• oxides 10%
• gases 8%
• gas mixtures 8%
• nitrogen 6%
• shift 5%
• spectroscopy 4%
• pulses 4%

Chemical Compounds

• Silicon Oxide 85%
• Capacitor 70%
• Chemical Passivation 70%
• Interface Trap 43%
• Hydrogen 35%
• Metal 31%
• Rapid Thermal Annealing 25%
• Annealing 20%
• Environment 14%
• Deep Level Transient Spectroscopy 14%
• Gas 13%
• Oxide 9%
• Tunneling 8%
• Charge Density 8%
• Nitrogen 5%
• Mixture 3%