Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra

A. Y. Polyakov, In Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, F. Ren, P. H. Carey, S. J. Pearton

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The effects of hydrogen plasma treatment of β-Ga2O3 grown by halide vapor phase epitaxy and doped with Si are reported. Samples subjected to H plasma exposure at 330 °C developed a wide (∼2.5 μm-thick) region near the surface, depleted of electrons at room temperature. The thickness of the layer is in reasonable agreement with the estimated hydrogen penetration depth in β-Ga2O3 based on previous deuterium profiling experiments. Admittance spectroscopy and photoinduced current transient spectroscopy measurements place the Fermi level pinning position in the H treated film near Ec-1.05 eV. Annealing at 450 °C decreased the thickness of the depletion layer to 1.3 μm at room temperature and moved the Fermi level pinning position to Ec-0.8 eV. Further annealing at 550 °C almost restored the starting shallow donor concentration and the spectra of deep traps dominated by Ec-0.8 eV and Ec-1.05 eV observed before hydrogen treatment. It is suggested that hydrogen plasma exposure produces surface damage in the near-surface region and passivates or compensates shallow donors.

Original languageEnglish
Article number032101
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2019 Jul 15

Bibliographical note

Funding Information:
The work at NUST MISiS was supported in part by the Russian Science Foundation, grant no. 19-19-00409. The work at IMT RAS was supported by the State Task No. 075-00475-19-00. The work at UF was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova).

Publisher Copyright:
© 2019 Author(s).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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