Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystals

Soohwan Jang; Sunwoo Jung; Jihyun Kim; Fan Ren; Stephen J. Pearton; Kwang Hyeon Baik

doi:10.1149/2.0261807jss

Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga₂O₃ single crystals

Soohwan Jang, Sunwoo Jung, Jihyun Kim, Fan Ren, Stephen J. Pearton, Kwang Hyeon Baik

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We investigated the hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) β-Ga₂O₃ bulk crystals. The Pt Schottky diodes on β-Ga₂O₃ wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the (201) Ga₂O₃ diode sensor was as high as 7.86 × 10⁷ (%) at 0.8 V, which is slightly higher than that of the (010) Ga₂O₃ diode. The hydrogen responses of both β-Ga₂O₃ diode sensors are believed to result from oxygen and gallium atomic configurations of Ga₂O₃ surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga₂O₃ wafers did not show any clear response to other gases, such as N₂, CO, CO₂, O₂, CH₄, NO₂, andNH₃. Our finding suggests that the Pt Schottky diodes on β-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity.

Original language	English
Pages (from-to)	Q3180-Q3182
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	7
DOIs	https://doi.org/10.1149/2.0261807jss
Publication status	Published - 2018

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663, 2017R1D1A3B03035420), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). This present research was also supported by 2018 Hongik University Research Fund.

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663, 2017R1D1A3B03035420), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). This present research was also supported by 2018 Hongik University Research Fund

Publisher Copyright:
© The Author(s) 2018. Published by ECS.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1149/2.0261807jss

Cite this

@article{87e2a7cd2f42457a80b5b571b873dafd,

title = "Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystals",

abstract = "We investigated the hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) β-Ga2O3 bulk crystals. The Pt Schottky diodes on β-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the (201) Ga2O3 diode sensor was as high as 7.86 × 107 (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both β-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N2, CO, CO2, O2, CH4, NO2, andNH3. Our finding suggests that the Pt Schottky diodes on β-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity.",

author = "Soohwan Jang and Sunwoo Jung and Jihyun Kim and Fan Ren and Pearton, {Stephen J.} and Baik, {Kwang Hyeon}",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663, 2017R1D1A3B03035420), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). This present research was also supported by 2018 Hongik University Research Fund. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663, 2017R1D1A3B03035420), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). This present research was also supported by 2018 Hongik University Research Fund Publisher Copyright: {\textcopyright} The Author(s) 2018. Published by ECS.",

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volume = "7",

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T1 - Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystals

AU - Jang, Soohwan

AU - Jung, Sunwoo

AU - Kim, Jihyun

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Baik, Kwang Hyeon

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663, 2017R1D1A3B03035420), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). This present research was also supported by 2018 Hongik University Research Fund. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663, 2017R1D1A3B03035420), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). This present research was also supported by 2018 Hongik University Research Fund Publisher Copyright: © The Author(s) 2018. Published by ECS.

PY - 2018

Y1 - 2018

N2 - We investigated the hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) β-Ga2O3 bulk crystals. The Pt Schottky diodes on β-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the (201) Ga2O3 diode sensor was as high as 7.86 × 107 (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both β-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N2, CO, CO2, O2, CH4, NO2, andNH3. Our finding suggests that the Pt Schottky diodes on β-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity.

AB - We investigated the hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) β-Ga2O3 bulk crystals. The Pt Schottky diodes on β-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the (201) Ga2O3 diode sensor was as high as 7.86 × 107 (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both β-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N2, CO, CO2, O2, CH4, NO2, andNH3. Our finding suggests that the Pt Schottky diodes on β-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity.

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