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Hydrogen-sensitive GaN Schottky diodes
Jihyun Kim
, B. P. Gila
, G. Y. Chung
, C. R. Abernathy
, S. J. Pearton
, F. Ren
*
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
67
Citations (Scopus)
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Keyphrases
Forward Current
100%
N-GaN
100%
Temperature Measurement
100%
GaN Schottky Diodes
100%
Diode
50%
Low Temperature
50%
High Temperature
50%
Dissociation
50%
Barrier Height
50%
Hydrogen Diffusion
50%
Forward Bias
50%
Rate-determining Step
50%
Time Response
50%
Engineering
Low-Temperature
100%
Barrier Height
100%
Forward Bias
100%
Response Time
100%
Chemistry
Hydrogen
100%
Rate-Determining Step
25%
Earth and Planetary Sciences
Schottky Diode
100%
Physics
Schottky Diode
100%
Material Science
Schottky Diode
100%