Hysteresis behavior of the donor-acceptor-type ambipolar semiconductor for non-volatile memory applications

Keyphrases

• Non-volatile Memory 100%
• Memory Application 100%
• Donor-acceptor 100%
• Hysteresis Behavior 100%
• Ambipolar Semiconductors 100%
• Organic Semiconductors 50%
• Device Application 33%
• Field Effect Transistor Memory 33%
• Device Fabrication 16%
• Dielectric Layer 16%
• Voltage Increase 16%
• Gold Nanoparticles 16%
• Transfer Characteristics 16%
• As-synthesized 16%
• Cycling Test 16%
• Electrical Stability 16%
• Field-effect Transistors 16%
• Memory Window 16%
• Gate Voltage 16%
• Ambipolar 16%
• Organic Field-effect Transistors 16%
• Ambipolar Field-effect Transistors 16%
• Retention Test 16%
• Charge Trapping Layer 16%
• Ambipolar Characteristics 16%
• Characteristic Volatiles 16%

Material Science

• Field Effect Transistor 100%
• Device Fabrication 33%
• Gold Nanoparticle 33%
• Charge Trapping 33%
• Organic Field Effect Transistors 33%
• Dielectric Material 33%