Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Hyeok Jeon; Seung Geun Kim; June Park; Seung Hwan Kim; Euyjin Park; Jiyoung Kim; Hyun Yong Yu

doi:10.1002/smll.202004371

Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Hyeok Jeon, Seung Geun Kim, June Park, Seung Hwan Kim, Euyjin Park, Jiyoung Kim, Hyun Yong Yu

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.

Original language	English
Article number	2004371
Journal	Small
Volume	16
Issue number	49
DOIs	https://doi.org/10.1002/smll.202004371
Publication status	Published - 2020 Dec 10

Bibliographical note

Funding Information:
H.J. and S.‐G.K. contributed equally to this work. This research was supported by the National Research Foundation of Korea(NRF) Grant funded by the Ministry of Science and ICT for Original Technology Program (No. 2020M3F3A2A01082329) and was supported by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant No. 2020R1A2C2004029.

Publisher Copyright:
© 2020 Wiley-VCH GmbH

Keywords

2D materials
2D-based ferroelectric field effect transistors
HfO-based ferroelectric materials
optic-neural synapses
passivation effects

ASJC Scopus subject areas

Engineering (miscellaneous)
Chemistry(all)
Materials Science(all)
Biotechnology
Biomaterials

Access to Document

10.1002/smll.202004371

Cite this

@article{6f90190c66ab4678913d5bc01b9e8201,

title = "Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks",

abstract = "2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.",

keywords = "2D materials, 2D-based ferroelectric field effect transistors, HfO-based ferroelectric materials, optic-neural synapses, passivation effects",

author = "Hyeok Jeon and Kim, {Seung Geun} and June Park and Kim, {Seung Hwan} and Euyjin Park and Jiyoung Kim and Yu, {Hyun Yong}",

note = "Funding Information: H.J. and S.‐G.K. contributed equally to this work. This research was supported by the National Research Foundation of Korea(NRF) Grant funded by the Ministry of Science and ICT for Original Technology Program (No. 2020M3F3A2A01082329) and was supported by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant No. 2020R1A2C2004029. Publisher Copyright: {\textcopyright} 2020 Wiley-VCH GmbH",

year = "2020",

month = dec,

day = "10",

doi = "10.1002/smll.202004371",

language = "English",

volume = "16",

journal = "Small",

issn = "1613-6810",

publisher = "Wiley-VCH Verlag",

number = "49",

}

TY - JOUR

T1 - Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

AU - Jeon, Hyeok

AU - Kim, Seung Geun

AU - Park, June

AU - Kim, Seung Hwan

AU - Park, Euyjin

AU - Kim, Jiyoung

AU - Yu, Hyun Yong

N1 - Funding Information: H.J. and S.‐G.K. contributed equally to this work. This research was supported by the National Research Foundation of Korea(NRF) Grant funded by the Ministry of Science and ICT for Original Technology Program (No. 2020M3F3A2A01082329) and was supported by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant No. 2020R1A2C2004029. Publisher Copyright: © 2020 Wiley-VCH GmbH

PY - 2020/12/10

Y1 - 2020/12/10

N2 - 2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.

AB - 2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.

KW - 2D materials

KW - 2D-based ferroelectric field effect transistors

KW - HfO-based ferroelectric materials

KW - optic-neural synapses

KW - passivation effects

UR - http://www.scopus.com/inward/record.url?scp=85097032923&partnerID=8YFLogxK

U2 - 10.1002/smll.202004371

DO - 10.1002/smll.202004371

M3 - Article

C2 - 33205614

AN - SCOPUS:85097032923

SN - 1613-6810

VL - 16

JO - Small

JF - Small

IS - 49

M1 - 2004371

ER -

Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this