I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy

D. S. Choi; Y. Rheem; B. Yoo; N. V. Myung; Y. K. Kim

doi:10.1016/j.cap.2009.12.036

I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy

D. S. Choi, Y. Rheem, B. Yoo, N. V. Myung, Y. K. Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.

Original language	English
Pages (from-to)	1037-1040
Number of pages	4
Journal	Current Applied Physics
Volume	10
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2009.12.036
Publication status	Published - 2010 Jul

Keywords

Electrical resistance
Single Ni nanowire
Voltage-applied atomic force microscopy

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2009.12.036

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title = "I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy",

abstract = "We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.",

keywords = "Electrical resistance, Single Ni nanowire, Voltage-applied atomic force microscopy",

author = "Choi, \{D. S.\} and Y. Rheem and B. Yoo and Myung, \{N. V.\} and Kim, \{Y. K.\}",

year = "2010",

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doi = "10.1016/j.cap.2009.12.036",

language = "English",

volume = "10",

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T1 - I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy

AU - Choi, D. S.

AU - Rheem, Y.

AU - Yoo, B.

AU - Myung, N. V.

AU - Kim, Y. K.

PY - 2010/7

Y1 - 2010/7

N2 - We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.

AB - We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.

KW - Electrical resistance

KW - Single Ni nanowire

KW - Voltage-applied atomic force microscopy

UR - https://www.scopus.com/pages/publications/77951229845

U2 - 10.1016/j.cap.2009.12.036

DO - 10.1016/j.cap.2009.12.036

M3 - Article

AN - SCOPUS:77951229845

SN - 1567-1739

VL - 10

SP - 1037

EP - 1040

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy

Abstract

Keywords

ASJC Scopus subject areas

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