Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

A. V. Govorkov; A. Ya Polyakov; T. G. Yugova; N. B. Smirnov; E. A. Petrova; M. V. Mezhennyi; A. V. Markov; I. H. Lee; S. J. Pearton

doi:10.1134/S1027451007040039

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

A. V. Govorkov, A. Ya Polyakov, T. G. Yugova, N. B. Smirnov, E. A. Petrova, M. V. Mezhennyi, A. V. Markov, I. H. Lee, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 10⁶-10⁸ cm^-2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 10⁶-10⁸ cm^-2. It is also found that some deep electron and hole traps are related to dislocations.

Original language	English
Pages (from-to)	380-385
Number of pages	6
Journal	Journal of Surface Investigation
Volume	1
Issue number	4
DOIs	https://doi.org/10.1134/S1027451007040039
Publication status	Published - 2007 Aug
Externally published	Yes

ASJC Scopus subject areas

Surfaces, Coatings and Films

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@article{b723cce09e3248b4bbd832cb7bc1091f,

title = "Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride",

abstract = "The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 106-108 cm-2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 106-108 cm-2. It is also found that some deep electron and hole traps are related to dislocations.",

author = "Govorkov, {A. V.} and Polyakov, {A. Ya} and Yugova, {T. G.} and Smirnov, {N. B.} and Petrova, {E. A.} and Mezhennyi, {M. V.} and Markov, {A. V.} and Lee, {I. H.} and Pearton, {S. J.}",

note = "Funding Information: The work was supported by the Russian Foundation for Basic Research, project nos. 04-02-16510, 05-02-0815, and 06-02-16212, and by the International Scientific Technical Center, project no. 3029.",

year = "2007",

month = aug,

doi = "10.1134/S1027451007040039",

language = "English",

volume = "1",

pages = "380--385",

journal = "Journal of Surface Investigation",

issn = "1027-4510",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "4",

}

TY - JOUR

T1 - Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

AU - Govorkov, A. V.

AU - Polyakov, A. Ya

AU - Yugova, T. G.

AU - Smirnov, N. B.

AU - Petrova, E. A.

AU - Mezhennyi, M. V.

AU - Markov, A. V.

AU - Lee, I. H.

AU - Pearton, S. J.

N1 - Funding Information: The work was supported by the Russian Foundation for Basic Research, project nos. 04-02-16510, 05-02-0815, and 06-02-16212, and by the International Scientific Technical Center, project no. 3029.

PY - 2007/8

Y1 - 2007/8

N2 - The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 106-108 cm-2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 106-108 cm-2. It is also found that some deep electron and hole traps are related to dislocations.

AB - The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 106-108 cm-2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 106-108 cm-2. It is also found that some deep electron and hole traps are related to dislocations.

UR - http://www.scopus.com/inward/record.url?scp=49249117494&partnerID=8YFLogxK

U2 - 10.1134/S1027451007040039

DO - 10.1134/S1027451007040039

M3 - Article

AN - SCOPUS:49249117494

SN - 1027-4510

VL - 1

SP - 380

EP - 385

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

IS - 4

ER -

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

Abstract

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