III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

Alexander Y. Polyakov; Taehwan Kim; In Hwan Lee; Stephen J. Pearton

doi:10.1002/pssb.201800589

III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

Alexander Y. Polyakov, Taehwan Kim, In Hwan Lee, Stephen J. Pearton

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.

Original language	English
Article number	1800589
Journal	Physica Status Solidi (B) Basic Research
Volume	256
Issue number	5
DOIs	https://doi.org/10.1002/pssb.201800589
Publication status	Published - 2019 May

Bibliographical note

Funding Information:
The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (К2-2017-068). The work at Korea University was supported by the Technology Innovation Program (20000261) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). The work at UF was supported by DTRA grant HDTRA1-17-1-0011. The authors gratefully acknowledge long standing collaboration with Dr. D.-W.Jeon,Dr.L.-W.Jang,Dr.J.-H.Yun,Prof.J.-K.Yang,Dr.J.-H.Baek,Prof.E.B. Yakimov, Dr. N. B. Smirnov, and Dr. K. D. Scherbachev.

Funding Information:
In-Hwan Lee received his PhD degree in Materials Science and Engineering in 1997 from Korea University in South Korea. During 1997–1999, he was a postdoctoral fellow at Northwestern University. Then, he joined Samsung Advanced Institute of Technology, where he led an epitaxial team and developed InGaN/GaN violet laser diodes. From 2002 to 2017, he was a professor in Division of Advanced Materials Engineering at Chonbuk National University in South Korea. With the sabbatical grant from LG foundation, he was at Yale University during 2008– 2009. In March 2017, he joined Department of Materials Engineering, Korea University, Korea as a full professor. His current research focuses on the development of nanotechnology-inspired novel optoelectronic devices including light-emitting diodes, photovoltaic devices, and sensors.

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

III-nitrides
light emitting diodes
nanowires

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.201800589

Cite this

@article{caa55d3946e04e81876b26cb3bb2cd2e,

title = "III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes",

abstract = "This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.",

keywords = "III-nitrides, light emitting diodes, nanowires",

author = "Polyakov, {Alexander Y.} and Taehwan Kim and Lee, {In Hwan} and Pearton, {Stephen J.}",

note = "Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (К2-2017-068). The work at Korea University was supported by the Technology Innovation Program (20000261) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). The work at UF was supported by DTRA grant HDTRA1-17-1-0011. The authors gratefully acknowledge long standing collaboration with Dr. D.-W.Jeon,Dr.L.-W.Jang,Dr.J.-H.Yun,Prof.J.-K.Yang,Dr.J.-H.Baek,Prof.E.B. Yakimov, Dr. N. B. Smirnov, and Dr. K. D. Scherbachev. Funding Information: In-Hwan Lee received his PhD degree in Materials Science and Engineering in 1997 from Korea University in South Korea. During 1997–1999, he was a postdoctoral fellow at Northwestern University. Then, he joined Samsung Advanced Institute of Technology, where he led an epitaxial team and developed InGaN/GaN violet laser diodes. From 2002 to 2017, he was a professor in Division of Advanced Materials Engineering at Chonbuk National University in South Korea. With the sabbatical grant from LG foundation, he was at Yale University during 2008– 2009. In March 2017, he joined Department of Materials Engineering, Korea University, Korea as a full professor. His current research focuses on the development of nanotechnology-inspired novel optoelectronic devices including light-emitting diodes, photovoltaic devices, and sensors. Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2019",

month = may,

doi = "10.1002/pssb.201800589",

language = "English",

volume = "256",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "5",

}

TY - JOUR

T1 - III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

AU - Polyakov, Alexander Y.

AU - Kim, Taehwan

AU - Lee, In Hwan

AU - Pearton, Stephen J.

N1 - Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (К2-2017-068). The work at Korea University was supported by the Technology Innovation Program (20000261) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). The work at UF was supported by DTRA grant HDTRA1-17-1-0011. The authors gratefully acknowledge long standing collaboration with Dr. D.-W.Jeon,Dr.L.-W.Jang,Dr.J.-H.Yun,Prof.J.-K.Yang,Dr.J.-H.Baek,Prof.E.B. Yakimov, Dr. N. B. Smirnov, and Dr. K. D. Scherbachev. Funding Information: In-Hwan Lee received his PhD degree in Materials Science and Engineering in 1997 from Korea University in South Korea. During 1997–1999, he was a postdoctoral fellow at Northwestern University. Then, he joined Samsung Advanced Institute of Technology, where he led an epitaxial team and developed InGaN/GaN violet laser diodes. From 2002 to 2017, he was a professor in Division of Advanced Materials Engineering at Chonbuk National University in South Korea. With the sabbatical grant from LG foundation, he was at Yale University during 2008– 2009. In March 2017, he joined Department of Materials Engineering, Korea University, Korea as a full professor. His current research focuses on the development of nanotechnology-inspired novel optoelectronic devices including light-emitting diodes, photovoltaic devices, and sensors. Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/5

Y1 - 2019/5

N2 - This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.

AB - This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.

KW - III-nitrides

KW - light emitting diodes

KW - nanowires

UR - http://www.scopus.com/inward/record.url?scp=85065466988&partnerID=8YFLogxK

U2 - 10.1002/pssb.201800589

DO - 10.1002/pssb.201800589

M3 - Article

AN - SCOPUS:85065466988

SN - 0370-1972

VL - 256

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 5

M1 - 1800589

ER -

III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this