III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

Alexander Y. Polyakov, Taehwan Kim, In Hwan Lee, Stephen J. Pearton

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.

Original languageEnglish
Article number1800589
JournalPhysica Status Solidi (B) Basic Research
Volume256
Issue number5
DOIs
Publication statusPublished - 2019 May

Bibliographical note

Funding Information:
The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (К2-2017-068). The work at Korea University was supported by the Technology Innovation Program (20000261) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). The work at UF was supported by DTRA grant HDTRA1-17-1-0011. The authors gratefully acknowledge long standing collaboration with Dr. D.-W.Jeon,Dr.L.-W.Jang,Dr.J.-H.Yun,Prof.J.-K.Yang,Dr.J.-H.Baek,Prof.E.B. Yakimov, Dr. N. B. Smirnov, and Dr. K. D. Scherbachev.

Funding Information:
In-Hwan Lee received his PhD degree in Materials Science and Engineering in 1997 from Korea University in South Korea. During 1997–1999, he was a postdoctoral fellow at Northwestern University. Then, he joined Samsung Advanced Institute of Technology, where he led an epitaxial team and developed InGaN/GaN violet laser diodes. From 2002 to 2017, he was a professor in Division of Advanced Materials Engineering at Chonbuk National University in South Korea. With the sabbatical grant from LG foundation, he was at Yale University during 2008– 2009. In March 2017, he joined Department of Materials Engineering, Korea University, Korea as a full professor. His current research focuses on the development of nanotechnology-inspired novel optoelectronic devices including light-emitting diodes, photovoltaic devices, and sensors.

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

  • III-nitrides
  • light emitting diodes
  • nanowires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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