Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices with Partially Covered Intrinsic Regions

Minsuk Kim; Youngin Jeon; Yoonjoong Kim; Sangsig Kim

doi:10.1109/TNANO.2015.2427453

Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices with Partially Covered Intrinsic Regions

Minsuk Kim, Youngin Jeon, Yoonjoong Kim, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio ( I_on/I_off), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high I_on/I_off} of ∼10¹¹ and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.

Original language	English
Article number	7097725
Pages (from-to)	633-637
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	14
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2015.2427453
Publication status	Published - 2015 Jul

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

dual function
impact ionization
integration
sub-60 mV/dec
tunneling

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2015.2427453

Cite this

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title = "Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices with Partially Covered Intrinsic Regions",

abstract = "Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio ( Ion/Ioff), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high Ion/Ioff} of ∼1011 and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.",

keywords = "dual function, impact ionization, integration, sub-60 mV/dec, tunneling",

author = "Minsuk Kim and Youngin Jeon and Yoonjoong Kim and Sangsig Kim",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

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doi = "10.1109/TNANO.2015.2427453",

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AU - Jeon, Youngin

AU - Kim, Yoonjoong

AU - Kim, Sangsig

PY - 2015/7

Y1 - 2015/7

N2 - Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio ( Ion/Ioff), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high Ion/Ioff} of ∼1011 and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.

AB - Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio ( Ion/Ioff), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high Ion/Ioff} of ∼1011 and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.

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Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices with Partially Covered Intrinsic Regions

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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