Impact ionization and tunneling operations in charge-plasma dopingless device

Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyeungmin Im, Jinsun Cho, Hyungu Kang, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively—as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)—according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I–V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10−14 A/μm and a high ION/IOFF of approximately 108, under the n-TFET operation mode.

Original languageEnglish
Pages (from-to)796-805
Number of pages10
JournalSuperlattices and Microstructures
Publication statusPublished - 2017 Nov

Bibliographical note

Funding Information:
This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2013R1A2A1A03070750, NRF-2015R1A2A1A15055437), the Brain Korea 21 Plus Project in 2017, and Samsung Electronics.

Publisher Copyright:
© 2017 Elsevier Ltd


  • Charge-plasma effect
  • Dopingless
  • Dual functionality
  • Impact ionization
  • Tunneling

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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