Impact ionization and tunneling operations in charge-plasma dopingless device

Minsuk Kim; Yoonjoong Kim; Doohyeok Lim; Sola Woo; Kyeungmin Im; Jinsun Cho; Hyungu Kang; Sangsig Kim

doi:10.1016/j.spmi.2017.07.041

Impact ionization and tunneling operations in charge-plasma dopingless device

Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyeungmin Im, Jinsun Cho, Hyungu Kang, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively—as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)—according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I–V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10⁻¹⁴ A/μm and a high I_ON/I_OFF of approximately 10⁸, under the n-TFET operation mode.

Original language	English
Pages (from-to)	796-805
Number of pages	10
Journal	Superlattices and Microstructures
Volume	111
DOIs	https://doi.org/10.1016/j.spmi.2017.07.041
Publication status	Published - 2017 Nov

Bibliographical note

Funding Information:
This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2013R1A2A1A03070750, NRF-2015R1A2A1A15055437), the Brain Korea 21 Plus Project in 2017, and Samsung Electronics.

Publisher Copyright:
© 2017 Elsevier Ltd

Keywords

Charge-plasma effect
Dopingless
Dual functionality
Impact ionization
Tunneling

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2017.07.041

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title = "Impact ionization and tunneling operations in charge-plasma dopingless device",

abstract = "In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively—as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)—according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I–V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10−14 A/μm and a high ION/IOFF of approximately 108, under the n-TFET operation mode.",

keywords = "Charge-plasma effect, Dopingless, Dual functionality, Impact ionization, Tunneling",

author = "Minsuk Kim and Yoonjoong Kim and Doohyeok Lim and Sola Woo and Kyeungmin Im and Jinsun Cho and Hyungu Kang and Sangsig Kim",

note = "Funding Information: This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2013R1A2A1A03070750, NRF-2015R1A2A1A15055437), the Brain Korea 21 Plus Project in 2017, and Samsung Electronics. Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

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doi = "10.1016/j.spmi.2017.07.041",

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AU - Kim, Minsuk

AU - Kim, Yoonjoong

AU - Lim, Doohyeok

AU - Woo, Sola

AU - Im, Kyeungmin

AU - Cho, Jinsun

AU - Kang, Hyungu

AU - Kim, Sangsig

N1 - Funding Information: This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2013R1A2A1A03070750, NRF-2015R1A2A1A15055437), the Brain Korea 21 Plus Project in 2017, and Samsung Electronics. Publisher Copyright: © 2017 Elsevier Ltd

PY - 2017/11

Y1 - 2017/11

N2 - In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively—as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)—according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I–V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10−14 A/μm and a high ION/IOFF of approximately 108, under the n-TFET operation mode.

AB - In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively—as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)—according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I–V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10−14 A/μm and a high ION/IOFF of approximately 108, under the n-TFET operation mode.

KW - Charge-plasma effect

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KW - Tunneling

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Impact ionization and tunneling operations in charge-plasma dopingless device

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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