Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells

Chan Bin Mo, Se Jin Park, Soohyun Bae, Mi hwa Lim, Junggyu Nam, Dongseop Kim, Jung Yup Yang, Dongchul Suh, Byoung Koun Min, Donghwan Kim, Yoonmook Kang, Young Su Kim, Hae seok Lee

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The illuminated current-voltage characteristics of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin film solar cells fabricated using two different buffer layer processes: chemical bath deposition (CBD) and atomic layer deposition (ALD) were investigated. The CIGSSe solar cell with the ALD buffer showed comparable conversion efficiency to the CIGSSe solar cell with CBD buffer but lower shunt resistance even though it showed lower point shunt defect density as measured in electroluminescence. The shunt paths were investigated in detail by capturing the high-resolution dark lock-in thermography images, resolving the shunt resistance contributions of the scribing patterns (P1, P3), and depth profiling of the constituent elements. It was found that the concentration of Na from the soda-lime glass substrate played a key role in controlling the shunt paths. In the ALD process, Na segregated at the surface of CIGSSe and contributed to the increase in the shunt current through P1 and P3, resulting in a reduction in the fill factor of the CIGSSe solar cells.

Original languageEnglish
Article number3666
JournalScientific reports
Issue number1
Publication statusPublished - 2019 Dec 1

Bibliographical note

Funding Information:
This work was conducted under the framework of the Research and Development Program of the Korea Institute of Energy Research (KIER) (B7-2421). This work was supported by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and a financial grant from the Ministry of Trade, Industry & Energy, Republic of Korea (20163010012570). This work was also supported by the KU-KIST Graduate School Project.

Publisher Copyright:
© 2019, The Author(s).

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