The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a triangular fin channel was observed, arising from suppression of the variation in the conduction threshold voltage with increasing doping concentration, compared to JLTs with rectangular fin channels. The potential distribution in the channel cross-section shows a less varied potential at the bottom of a triangular channel than at the bottom of a rectangular channel, and supports the result that triangular channels are less sensitive to variations in channel doping concentration.
Bibliographical noteFunding Information:
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2016R1A6A3A11933511 , NRF-2017M3A7B4049167 ), the Future Semiconductor Device Technology Development Program ( 10067739 ) funded by Ministry of Trade, Industry & Energy (MOTIE) , Korea Semiconductor Research Consortium (KSRC) , the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant.
© 2019 Elsevier B.V.
- 2D numerical simulation
- Channel doping concentration
- Fin cross-section shape
- Junctionless transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering