Impact of process-induced variations on negative capacitance junctionless nanowire fet

Yejoo Choi; Jinwoong Lee; Jaehyuk Lim; Seungjun Moon; Changhwan Shin

doi:10.3390/electronics10161899

Impact of process-induced variations on negative capacitance junctionless nanowire fet

Yejoo Choi
, Jinwoong Lee
, Jaehyuk Lim
, Seungjun Moon
, Changhwan Shin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (V_ds = 0.05 V) and saturation (V_ds = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[V_t ], σ[SS], σ[I_on /I_off ], σ[V_t ]/µ[V_t ], σ[SS]/µ[SS], and σ[I_on /I_off ]/µ[I_on /I_off ], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.

Original language	English
Article number	1899
Journal	Electronics (Switzerland)
Volume	10
Issue number	16
DOIs	https://doi.org/10.3390/electronics10161899
Publication status	Published - 2021 Aug 2
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

Line edge roughness (LER)
Negative capacitance (NC)
Random dopant fluctuation (RDF)
Random variation
Work function variation (WFV)

ASJC Scopus subject areas

Control and Systems Engineering
Signal Processing
Hardware and Architecture
Computer Networks and Communications
Electrical and Electronic Engineering

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10.3390/electronics10161899

Cite this

@article{6c2eddf71fd3459e904cb6629a6f6556,

title = "Impact of process-induced variations on negative capacitance junctionless nanowire fet",

abstract = "In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (Vds = 0.05 V) and saturation (Vds = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[Vt ], σ[SS], σ[Ion /Ioff ], σ[Vt ]/µ[Vt ], σ[SS]/µ[SS], and σ[Ion /Ioff ]/µ[Ion /Ioff ], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.",

keywords = "Line edge roughness (LER), Negative capacitance (NC), Random dopant fluctuation (RDF), Random variation, Work function variation (WFV)",

author = "Yejoo Choi and Jinwoong Lee and Jaehyuk Lim and Seungjun Moon and Changhwan Shin",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = aug,

day = "2",

doi = "10.3390/electronics10161899",

language = "English",

volume = "10",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

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TY - JOUR

T1 - Impact of process-induced variations on negative capacitance junctionless nanowire fet

AU - Choi, Yejoo

AU - Lee, Jinwoong

AU - Lim, Jaehyuk

AU - Moon, Seungjun

AU - Shin, Changhwan

PY - 2021/8/2

Y1 - 2021/8/2

N2 - In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (Vds = 0.05 V) and saturation (Vds = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[Vt ], σ[SS], σ[Ion /Ioff ], σ[Vt ]/µ[Vt ], σ[SS]/µ[SS], and σ[Ion /Ioff ]/µ[Ion /Ioff ], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.

AB - In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (Vds = 0.05 V) and saturation (Vds = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[Vt ], σ[SS], σ[Ion /Ioff ], σ[Vt ]/µ[Vt ], σ[SS]/µ[SS], and σ[Ion /Ioff ]/µ[Ion /Ioff ], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.

KW - Line edge roughness (LER)

KW - Negative capacitance (NC)

KW - Random dopant fluctuation (RDF)

KW - Random variation

KW - Work function variation (WFV)

UR - https://www.scopus.com/pages/publications/85112591669

U2 - 10.3390/electronics10161899

DO - 10.3390/electronics10161899

M3 - Article

AN - SCOPUS:85112591669

SN - 2079-9292

VL - 10

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 16

M1 - 1899

ER -

Impact of process-induced variations on negative capacitance junctionless nanowire fet

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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