Impact of rapid‐thermal‐annealing temperature on the polarization characteristics of a pzt‐based ferroelectric capacitor

Hanyeong Yu; Changhwan Shin

doi:10.3390/electronics10111324

Impact of rapid‐thermal‐annealing temperature on the polarization characteristics of a pzt‐based ferroelectric capacitor

Hanyeong Yu
, Changhwan Shin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A metal‐ferroelectric‐metal (MFM) capacitor was fabricated to investigate the effect of the rate‐of‐change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor’s ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 × Pr) is measured and monitored while performing the RTA process at 500 °C–700 °C. It turned out that, for a given target/final temperature in the RTA process, 2Pr of the ferroelectric layer de-creases with a higher rate‐of‐change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate‐of‐changes of temperature) for a given final/target temperature.

Original language	English
Article number	1324
Journal	Electronics (Switzerland)
Volume	10
Issue number	11
DOIs	https://doi.org/10.3390/electronics10111324
Publication status	Published - 2021 Jun 1
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

Ferroelectric
PZT capacitor
Polarization
Rapid thermal annealing (RTA)

ASJC Scopus subject areas

Control and Systems Engineering
Signal Processing
Hardware and Architecture
Computer Networks and Communications
Electrical and Electronic Engineering

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10.3390/electronics10111324

Cite this

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title = "Impact of rapid‐thermal‐annealing temperature on the polarization characteristics of a pzt‐based ferroelectric capacitor",

abstract = "A metal‐ferroelectric‐metal (MFM) capacitor was fabricated to investigate the effect of the rate‐of‐change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor{\textquoteright}s ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 × Pr) is measured and monitored while performing the RTA process at 500 °C–700 °C. It turned out that, for a given target/final temperature in the RTA process, 2Pr of the ferroelectric layer de-creases with a higher rate‐of‐change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate‐of‐changes of temperature) for a given final/target temperature.",

keywords = "Ferroelectric, PZT capacitor, Polarization, Rapid thermal annealing (RTA)",

author = "Hanyeong Yu and Changhwan Shin",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = jun,

day = "1",

doi = "10.3390/electronics10111324",

language = "English",

volume = "10",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

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TY - JOUR

T1 - Impact of rapid‐thermal‐annealing temperature on the polarization characteristics of a pzt‐based ferroelectric capacitor

AU - Yu, Hanyeong

AU - Shin, Changhwan

PY - 2021/6/1

Y1 - 2021/6/1

N2 - A metal‐ferroelectric‐metal (MFM) capacitor was fabricated to investigate the effect of the rate‐of‐change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor’s ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 × Pr) is measured and monitored while performing the RTA process at 500 °C–700 °C. It turned out that, for a given target/final temperature in the RTA process, 2Pr of the ferroelectric layer de-creases with a higher rate‐of‐change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate‐of‐changes of temperature) for a given final/target temperature.

AB - A metal‐ferroelectric‐metal (MFM) capacitor was fabricated to investigate the effect of the rate‐of‐change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor’s ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 × Pr) is measured and monitored while performing the RTA process at 500 °C–700 °C. It turned out that, for a given target/final temperature in the RTA process, 2Pr of the ferroelectric layer de-creases with a higher rate‐of‐change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate‐of‐changes of temperature) for a given final/target temperature.

KW - Ferroelectric

KW - PZT capacitor

KW - Polarization

KW - Rapid thermal annealing (RTA)

UR - https://www.scopus.com/pages/publications/85106893346

U2 - 10.3390/electronics10111324

DO - 10.3390/electronics10111324

M3 - Article

AN - SCOPUS:85106893346

SN - 2079-9292

VL - 10

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 11

M1 - 1324

ER -

Impact of rapid‐thermal‐annealing temperature on the polarization characteristics of a pzt‐based ferroelectric capacitor

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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