Impact of series resistance on the operation of junctionless transistors

Dae Young Jeon; So Jeong Park; Mireille Mouis; Sylvain Barraud; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1016/j.sse.2016.12.004

Impact of series resistance on the operation of junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Transconductance (g_m) and its derivative (dg_m/dV_g) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (R_sd) causes significant degradation of intrinsic g_m and dg_m/dV_g behavior in JLTs. In this letter, the R_sd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded R_sd effects.

Original language	English
Pages (from-to)	103-107
Number of pages	5
Journal	Solid-State Electronics
Volume	129
DOIs	https://doi.org/10.1016/j.sse.2016.12.004
Publication status	Published - 2017 Mar 1

Bibliographical note

Publisher Copyright:
© 2016 Elsevier Ltd

Keywords

Analytical modeling
Bulk neutral conduction
De-embedded R effects
Junctionless transistors (JLTs)
Series resistance (R)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2016.12.004

Cite this

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title = "Impact of series resistance on the operation of junctionless transistors",

abstract = "Transconductance (gm) and its derivative (dgm/dVg) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (Rsd) causes significant degradation of intrinsic gm and dgm/dVg behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded Rsd effects.",

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AU - Park, So Jeong

AU - Mouis, Mireille

AU - Barraud, Sylvain

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

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AB - Transconductance (gm) and its derivative (dgm/dVg) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (Rsd) causes significant degradation of intrinsic gm and dgm/dVg behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded Rsd effects.

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KW - Bulk neutral conduction

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Impact of series resistance on the operation of junctionless transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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