Impact of substrate digital noise coupling on the high-frequency noise performance of RF MOSFETs

Yongho Oh; Seungyong Lee; Chan Hyeong Park; Jae Sung Rieh

doi:10.1109/LMWC.2009.2027064

Impact of substrate digital noise coupling on the high-frequency noise performance of RF MOSFETs

Yongho Oh, Seungyong Lee, Chan Hyeong Park, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The impact of digital noise coupling through the substrate on RF MOSFETs was investigated in terms of the noise figure (NF) of the device up to 26.5 GHz. Previous works on the substrate digital noise coupling have treated the effect mostly in terms of the electrical isolation between ports, rather than actual devices, which does not provide direct information on the degradation of actual device performance parameters from such coupling. In this work, an actual NMOSFET was employed for test and the effect was described in terms of NF, a practical device performance parameter. The results show that NF is significantly degraded as the device enters the weak inversion state and/or V ds becomes smaller, suggesting a trade-off between low power operation and immunity against the substrate noise coupling. Also, it is experimentally verified that devices with a dual guard ring showed much smaller NF than those with a single guard ring.

Original language	English
Article number	5200448
Pages (from-to)	557-559
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	19
Issue number	9
DOIs	https://doi.org/10.1109/LMWC.2009.2027064
Publication status	Published - 2009 Sept

Bibliographical note

Funding Information:
Manuscript received May 31, 2009; revised June 15, 2009. First published August 11, 2009; current version published September 02, 2009. This work was supported by ‘Next-generation growth engine’ project of MCIE and the National Program for Tera-Level Nanodevices of the Ministry of Education, Science and Technology as one of the 21 century Frontier Programs. Y. Oh and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). S. Lee is with Kasan R&D campus, LG electronics, Seoul 153-802, Korea. C. H. Park is with the Department of Electronics and Communications Engineering, Kwangwoon University, Seoul 139-701, Korea. Digital Object Identifier 10.1109/LMWC.2009.2027064 Fig. 1. Simulated structures (a) and resultant (b). Realistic CMOS process conditions were employed for the TCAD. Large and small are for the actual dimension of 20-and 5-finger RF MOSFETs, respectively, both with unit finger dimension of 0.13 m 2.0 m. For resistive coupling, large and V condition is used.

Keywords

Guard ring
Noise figure
Substrate coupling
Substrate noise

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/LMWC.2009.2027064

Cite this

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title = "Impact of substrate digital noise coupling on the high-frequency noise performance of RF MOSFETs",

abstract = "The impact of digital noise coupling through the substrate on RF MOSFETs was investigated in terms of the noise figure (NF) of the device up to 26.5 GHz. Previous works on the substrate digital noise coupling have treated the effect mostly in terms of the electrical isolation between ports, rather than actual devices, which does not provide direct information on the degradation of actual device performance parameters from such coupling. In this work, an actual NMOSFET was employed for test and the effect was described in terms of NF, a practical device performance parameter. The results show that NF is significantly degraded as the device enters the weak inversion state and/or V ds becomes smaller, suggesting a trade-off between low power operation and immunity against the substrate noise coupling. Also, it is experimentally verified that devices with a dual guard ring showed much smaller NF than those with a single guard ring.",

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author = "Yongho Oh and Seungyong Lee and Park, {Chan Hyeong} and Rieh, {Jae Sung}",

note = "Funding Information: Manuscript received May 31, 2009; revised June 15, 2009. First published August 11, 2009; current version published September 02, 2009. This work was supported by {\textquoteleft}Next-generation growth engine{\textquoteright} project of MCIE and the National Program for Tera-Level Nanodevices of the Ministry of Education, Science and Technology as one of the 21 century Frontier Programs. Y. Oh and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). S. Lee is with Kasan R&D campus, LG electronics, Seoul 153-802, Korea. C. H. Park is with the Department of Electronics and Communications Engineering, Kwangwoon University, Seoul 139-701, Korea. Digital Object Identifier 10.1109/LMWC.2009.2027064 Fig. 1. Simulated structures (a) and resultant (b). Realistic CMOS process conditions were employed for the TCAD. Large and small are for the actual dimension of 20-and 5-finger RF MOSFETs, respectively, both with unit finger dimension of 0.13 m 2.0 m. For resistive coupling, large and V condition is used.",

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AU - Park, Chan Hyeong

AU - Rieh, Jae Sung

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N2 - The impact of digital noise coupling through the substrate on RF MOSFETs was investigated in terms of the noise figure (NF) of the device up to 26.5 GHz. Previous works on the substrate digital noise coupling have treated the effect mostly in terms of the electrical isolation between ports, rather than actual devices, which does not provide direct information on the degradation of actual device performance parameters from such coupling. In this work, an actual NMOSFET was employed for test and the effect was described in terms of NF, a practical device performance parameter. The results show that NF is significantly degraded as the device enters the weak inversion state and/or V ds becomes smaller, suggesting a trade-off between low power operation and immunity against the substrate noise coupling. Also, it is experimentally verified that devices with a dual guard ring showed much smaller NF than those with a single guard ring.

AB - The impact of digital noise coupling through the substrate on RF MOSFETs was investigated in terms of the noise figure (NF) of the device up to 26.5 GHz. Previous works on the substrate digital noise coupling have treated the effect mostly in terms of the electrical isolation between ports, rather than actual devices, which does not provide direct information on the degradation of actual device performance parameters from such coupling. In this work, an actual NMOSFET was employed for test and the effect was described in terms of NF, a practical device performance parameter. The results show that NF is significantly degraded as the device enters the weak inversion state and/or V ds becomes smaller, suggesting a trade-off between low power operation and immunity against the substrate noise coupling. Also, it is experimentally verified that devices with a dual guard ring showed much smaller NF than those with a single guard ring.

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Impact of substrate digital noise coupling on the high-frequency noise performance of RF MOSFETs

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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